Thickness Dependence Of The Charge-Density-Wave Transition Temperature In Vse2

jiyong yang,weike wang,yan liu,haifeng du,wei ning,guolin zheng,chiming jin,yuyan han,ning wang,zhaorong yang,mingliang tian,yuheng zhang
DOI: https://doi.org/10.1063/1.4893027
IF: 4
2014-01-01
Applied Physics Letters
Abstract:A set of three-dimensional charge-density-wave (3D CDW) VSe2 nano-flakes with different thicknesses were obtained by the scotch tape-based micro-mechanical exfoliation method. Resistivity measurements showed that the 3D CDW transition temperature T-p decreases systematically from 105 K in bulk to 81.8 K in the 11.6 nm thick flake. The Hall resistivity rho(xy), of all the flakes showed a linear dependent behavior against the magnetic field with a residual electron concentration of the order of similar to 10(21) cm(-3) at 5 K. The electron concentration n increases slightly as the thickness ((decreases, possibly due to the CDW gap is reduced with the decrease of the thickness. (C) 2014 AIP Publishing LLC.
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