Polarization of the Edge Emission from Ag/Ingaasp Schottky Plasmonic Diode

C. Wang,H. J. Qu,W. X. Chen,G. Z. Ran,H. Y. Yu,B. Niu,J. Q. Pan,W. Wang
DOI: https://doi.org/10.1063/1.4792508
IF: 4
2013-01-01
Applied Physics Letters
Abstract:Electrical plasmonic sources with compact sizes are a fundamental component in plasmonics. Here, we report a simple plasmonic diode having an Ag/InGaAsP quantum well Schottky structure. The polarization ratio (TM:TE) of the edge-emission photoluminescence for the quantum wells is about 2:1 and increases to about 3:1 after covered by Ag. As contrast, the electroluminescence polarization ratio exceeds 10:1 at a low current, indicating a high plasmon generation efficiency but drops gradually as current increasing; simultaneously, the peak wavelength red shifts evidently, which are attributed to the recombination zone shift and quantum confinement Stark effect.
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