Abstract:When light hits the interface between media characterized by different refractive indices, a fraction is reflected: see Figure 1(a). This imposes severe limits on many optoelectronic devices such as solar cells1 and LEDs.2 A range of techniques to reduce reflection have been proposed and developed. For example, a quarter-wavelength transparent layer is typically used as an antireflection coating in solar cells. However, this technique only works for specific wavelengths. Since solar energy covers a wide range of wavelengths, a broadband method is favored. With graded refractive-index layers, light only experiences a gradual change of the refractive index instead of hitting a sharp interface—see Figure 1(c)—and reflection can be greatly reduced for a large range of wavelengths and angles of incidence. Several techniques have been developed to fabricate these layers.3, 4 However, many involve complicated processes or work only for certain materials. We have developed a simple, low-temperature, integratedcircuit-compatible fabrication process. To date, it has thus far only been demonstrated on crystalline5 and hydrogenated amorphous silicon (a-Si:H),6 but it can in principle be applied to other materials as well. A monolayer of silica nanoparticles is first formed on the surface of a sample with an amorphoussilicon thin film on top: see Figures 1(d) and 1(e). The sample is then placed into the reactive-ion etcher (RIE), with the nanoparticles serving as a mask for etching. Either nanowire or nanocone arrays—Figures 1(f) and 1(g), respectively—can be obtained, depending on etching conditions. We used three samples to evaluate the antireflection effect (see Figure 2). A 1μm-thick a-Si:H thin film was deposited onto each, while a monolayer of silica nanoparticles was preformed on the second and third samples. After RIE etching, nanowire and nanocone arrays were formed on the second and third samples, respectively. The thin-film sample had a highly reflective, Figure 1. Effective refractive-index profiles of the interface between air and (a) hydrogenated amorphous-silicon (a-Si:H) thin film, (b) 600nm a-Si:H nanowire (NW) arrays, and (c) 600nm a-Si:H nanocone (NC) arrays. (d)–(g) Schematic illustrations of 1μm-thick a-Si:H on indium tin oxide (ITO)-coated glass substrate, a monolayer of silica (SiO2) nanoparticles on top of a-Si:H thin film, and arrays of NWs and NCs.

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