Quantifying Thickness-Dependent Charge Mediated Magnetoelectric Coupling in Magnetic/Dielectric Thin Film Heterostructures

Z. Zhou,T. X. Nan,Y. Gao,X. Yang,S. Beguhn,M. Li,Y. Lu,J. L. Wang,M. Liu,K. Mahalingam,B. M. Howe,G. J. Brown,N. X. Sun
DOI: https://doi.org/10.1063/1.4839276
IF: 4
2013-01-01
Applied Physics Letters
Abstract:Precise quantification of the magnetoelectric coupling strength in surface charge induced magnetoelectric effect was investigated in NiFe/SrTiO3thin film heterostructures with different ultra-thin NiFe thicknesses through voltage induced ferromagnetic resonance. The voltage induced ferromagnetic resonance field shifts in these NiFe/SrTiO3thin films heterostructures showed a maximum value of 65 Oe at an intermediate NiFe layer thickness of ∼1.2 nm, which was interpreted based on the thin film growth model at the low-thicknesses and on the charge screening effect at large thicknesses. The precise quantification and understanding of the magnetoelectric coupling in magnetic/dielectric thin filmsheterostructures constitute an important step toward real applications.
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