Low-temperature Spin Spray Deposited Ferrite/piezoelectric Thin Film Magnetoelectric Heterostructures with Strong Magnetoelectric Coupling

Z. Zhou,O. Obi,T. X. Nan,S. Beguhn,J. Lou,X. Yang,Y. Gao,M. Li,S. Rand,H. Lin,N. X. Sun,G. Esteves,K. Nittala,J. L. Jones,K. Mahalingam,M. Liu,G. J. Brown
DOI: https://doi.org/10.1007/s10854-014-1707-7
2014-01-01
Journal of Materials Science Materials in Electronics
Abstract:We report low-temperature spin spray deposited Fe3O4/ZnO thin film microwave magnetic/piezoelectric magnetoelectric heterostructures. A voltage induced effective ferromagnetic resonance field of 14 Oe was realized in Fe3O4/ZnO magnetoelectric (ME) heterostructures. Compared with most thin film magnetoelectric heterostructures prepared by high temperature (>600 °C) deposition methods, for example, pulsed laser deposition, molecular beam epitaxy, or sputtering, Fe3O4/ZnO ME heterostructures have much lower deposition temperature (<100 °C) at a much lower cost and less energy dissipation, which can be readily integrated in different integrated circuits.
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