Abstract:The XYZ half-Heusler crystal structure can conveniently be described as a tetrahedral zinc blende YZ structure which is stuffed by a slightly ionic X species. This description is well suited to understand the electronic structure of semiconducting 8-electron compounds such as LiAlSi (formulated Li$^+$[AlSi]$^-$) or semiconducting 18-electron compounds such as TiCoSb (formulated Ti$^{4+}$[CoSb]$^{4-}$). The basis for this is that [AlSi]$^-$ (with the same electron count as Si$_2$) and [CoSb]$^{4-}$ (the same electron count as GaSb), are both structurally and electronically, zinc-blende semiconductors. The electronic structure of half-metallic ferromagnets in this structure type can then be described as semiconductors with stuffing magnetic ions which have a local moment: For example, 22 electron MnNiSb can be written Mn$^{3+}$[NiSb]$^{3-}$. The tendency in the 18 electron compound for a semiconducting gap -- believed to arise from strong covalency -- is carried over in MnNiSb to a tendency for a gap in one spin direction. Here we similarly propose the systematic examination of 18-electron hexagonal compounds for semiconducting gaps; these would be the "stuffed wurtzite" analogues of the "stuffed zinc blende" half-Heusler compounds. These semiconductors could then serve as the basis for possibly new families of half-metallic compounds, attained through appropriate replacement of non-magnetic ions by magnetic ones. These semiconductors and semimetals with tunable charge carrier concentrations could also be interesting in the context of magnetoresistive and thermoelectric materials.

Wurtzite NiO: A Potential Half-Metal for Wide Gap Semiconductors

Half-Metallicity of Wurtzite Nio and W-Nio/Zno (0001) Interface: First Principles Simulation

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

Half-Metallic Nio in Zinc-Blende Structure from Ab Initio Calculations

Two-Dimensional Electron or Hole Gas at Zno/6h-Sic Interface

Half-Metallicity in Co-Doped WSe2 Nanoribbons

Predictive Design of Intrinsic Half-Metallicity in Zigzag Tungsten Dichalcogenide Nanoribbons

Searching for hexagonal analogues of the half-metallic half-Heusler XYZ compounds

Half Metallicity along the Edge of Zigzag Boron Nitride Nanoribbons

Thermoelectric Performance of Half-Heusler Compounds TiNiSn and TiCoSb

A Full Potential All-Electron Calculation on Electronic Structure of NiO

A 2D low-buckled hexagonal honeycomb Weyl-point spin-gapless semiconductor family with the quantum anomalous Hall effect

The fate of half-metallicity near interfaces: the case of NiMnSb/MgO and NiMnSi/MgO

Two-dimensional Half-Metals MSi2N4 (M = Al, Ga, In, Tl) with Intrinsic P-Type Ferromagnetism and Ultrawide Bandgaps.

Structural stability, electronic structure and magnetic properties of the new hypothetical half-metallic ferromagnetic full-Heusler alloy CoNiMnSi

Half-Semiconductor antiferromagnets and Spin-Gapless-Semiconductor antiferromagnets

Ferromagnetism in Pure Wurtzite Zinc Oxide

Spintronic properties and stability of the half-Heusler alloys LiMnZ (Z=N, P, Si)

Monolayer MXenes: promising half-metals and spin gapless semiconductors

Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices

Spin-polarized two-dimensional electron/hole gas at the interface of non-magnetic semiconducting half-Heusler compounds: Modified Slater-Pauling rule for half-metallicity at the interface