Half-Metallic Nio in Zinc-Blende Structure from Ab Initio Calculations

R. Q. Wu,Y. P. Feng,Y. F. Ouyang,P. Zhou,C. H. Hu
DOI: https://doi.org/10.1063/1.2969053
IF: 2.877
2008-01-01
Journal of Applied Physics
Abstract:Structural and electronic properties of NiO in the zinc-blende (zb) structure have been studied by ab initio calculations based on density functional theory. The results show that zb-NiO has a half-metallic band structure and its lattice constant is compatible to that of wide gap semiconductors such as SiC, GaN, and ZnO. The half-metallic character can survive the in-plane strain from the wide gap semiconductor substrates. Thus, our calculations indicate that NiO can be a potential half metal for these wide gap semiconductors for spin injection.
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