Abstract:The XYZ half-Heusler crystal structure can conveniently be described as a tetrahedral zinc blende YZ structure which is stuffed by a slightly ionic X species. This description is well suited to understand the electronic structure of semiconducting 8-electron compounds such as LiAlSi (formulated Li$^+$[AlSi]$^-$) or semiconducting 18-electron compounds such as TiCoSb (formulated Ti$^{4+}$[CoSb]$^{4-}$). The basis for this is that [AlSi]$^-$ (with the same electron count as Si$_2$) and [CoSb]$^{4-}$ (the same electron count as GaSb), are both structurally and electronically, zinc-blende semiconductors. The electronic structure of half-metallic ferromagnets in this structure type can then be described as semiconductors with stuffing magnetic ions which have a local moment: For example, 22 electron MnNiSb can be written Mn$^{3+}$[NiSb]$^{3-}$. The tendency in the 18 electron compound for a semiconducting gap -- believed to arise from strong covalency -- is carried over in MnNiSb to a tendency for a gap in one spin direction. Here we similarly propose the systematic examination of 18-electron hexagonal compounds for semiconducting gaps; these would be the "stuffed wurtzite" analogues of the "stuffed zinc blende" half-Heusler compounds. These semiconductors could then serve as the basis for possibly new families of half-metallic compounds, attained through appropriate replacement of non-magnetic ions by magnetic ones. These semiconductors and semimetals with tunable charge carrier concentrations could also be interesting in the context of magnetoresistive and thermoelectric materials.

Half-metallic Zinc-blende Compounds

Towards New Half-Metallic Systems: Zinc-Blende Compounds of Transition Elements with N, P, As, Sb, S, Se, and Te

Ferromagnetic materials in the zinc-blende structure

Half-Metallic Ferromagnetism in Zinc-Blende Cac, Src, and Bac from First Principles

First-Principles Study on the Half-Metallic Ferromagnetism of Zinc-Blende Structural Scx (X = C, Si, Ge, and Sn)

Characterization of a noisy quantum process by complementary classical operations

The Half-Metallicity Of Limgpdsn-Type Quaternary Heusler Alloys Femnscz (Z=Al, Ga, In): A First-Principle Study

Structural, Optical and Half-Metallic Properties of Mn and As Co-Implanted ZnO Thin Films

Ab-initio design of half-metallic fully-compensated ferrimagnets: the case of Cr$_2$MnZ (Z= P, As, Sb, Bi) compounds

Searching for hexagonal analogues of the half-metallic half-Heusler XYZ compounds

Covalent bonding and the nature of band gaps in some half-Heusler compounds

Stability of ferromagnetism in the half-metallic pnictides and similar compounds: A first-principles study

Electronic Structures, Magnetic Properties and Half-Metallicity in Heusler Alloys Zr2CoZ (z=al, Ga, In, Sn)

Half-Metals: Challenges in Spintronics and Routes Toward Solutions

Spintronic properties and stability of the half-Heusler alloys LiMnZ (Z=N, P, Si)

Fundamentals of half-metallic Full-Heusler alloys

Introduction to half-metallic Heusler alloys: Electronic Structure and Magnetic Properties

Systematic understanding of half-metallicity of ternary compounds in Heusler and Inverse Heusler structures with 3$d$ and 4$d$ elements

Structural, Electronic, Mechanical and Optical Properties of RhZrZ (Z = As, Sb) Half‐Heusler Compounds: First‐Principles Calculations

Strain-Induced Half-Metallicity of Alkaline-Earth Alloyed Zinc-Blende SiC and GaN

Two Prospective Li-based Half-Heusler Alloys for Spintronic Applications Based on Structural Stability and Spin–orbit Effect