Abstract:We examine the morphological, magnetic and resistive switching characteristics of ZnO co-doped with both cobalt (Co) and gadolinium (Gd) for the purpose of Neuromemristive systems. By employing hydrothermal route synthesized nanoparticles and their corresponding lab-made target for sputtering methods; we incorporate gadolinium (Gd) and Cobalt (Co) into the ZnO structure. This results in an augmentation of grain volume and oxygen vacancies, which signifies the occurrence of grain growth. The increase in size of the nanoparticles decreases the interfaces between the grains, resulting in improved electrical response and the presence of ferromagnetism at 300 K in Gd and Co-doped ZnO nanoparticles. We introduce a memristor that is fabricated using sputtering and consists of a 3% (Co, Gd) co–ZnO layer interposed between Au electrodes. Characterization verifies the existence of the ZnO layer and the presence of Au electrodes that are 50 nm in thickness. The memristor demonstrates consistent analog resistance switching, enabling control over the conductance between states of low and high resistance. The memristor demonstrates asymmetry resistance switching, enabling control over the conductance between states of low and high resistance, which can be attributed to the underlying electrochemical processes occurring within the device. Statistical perseverance studies demonstrate consistent resistive switching with low variation over 120 pulse cycles at normal 300 K. The recognition properties exhibit four clearly defined current states that remain stable for a duration of up to 10 K seconds, indicating exceptional thermal stability. The switching mechanism of the physical model is elucidated by the migration of Au ions during the "set" process leading to the formation of conductive pathways or filaments and the rupture of the filament during the "reset" process. The I-V curves (current–voltage curves) suggest the presence of space-charge limited current, highlighting the creation of conductive filaments. This study demonstrates the ability to precisely adjust resistance in response to different voltages, showing its potential as Neuromemristive system for biological synapse.

Formation and Electrical Bistability Properties of Zno Nanoparticles Embedded in Polyimide Nanocomposites Sandwiched Between Two C-60 Layers

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Ferroelectric-carbon Nanotube Memory Devices.

Effect of the Interfacial Nanoparticles on Organic Cross-Point Memory

Formation of SnOx Nanoparticles at the AIDCN/ITO Interface in Organic Cross-Point Memory Devices

Formation of Multiple Conductive Filaments in the Cu/ZrO2:Cu/Pt Device

Electrical Bistability in Self-Assembled Hybrid Multilayers of Phospholipid and Nanoparticles.

Nano-embossing Technology on Ferroelectric Thin Film Pb(Zr0.3,Ti0.7)O3 for Multi-Bit Storage Application.

Intracranial Sarcoid Granuloma as An extension of Severe Sinonasal Sarcoidosis

Electrical properties and carrier transport mechanisms of nonvolatile memory devices based on randomly oriented ZnO nanowire networks

Electrochemical Fabrication of A Memory Device Based on Conducting Polymer Nanocomposites

Improved Resistive Switching Stability of Pt/ZnO/CoO X /zno/pt Structure for Nonvolatile Memory Devices

Doping induced enhancement of resistive switching responses in ZnO for neuromorphic computing

Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing

Studies on Al-doped ZnO Thin-Film Transistors with Pb(Zr0.3Ti0.7)O3 Gate Insulator

Rewritable and non-volatile memory effects based on polyimides containing pendant carbazole and triphenylamine groups

Quantum Conductors Formation and Resistive Switching Memory Effects in Zirconia Nanotubes

Bipolar Resistance Switching In High-Performance Cu/Zno : Mn/Pt Nonvolatile Memories: Active Region And Influence Of Joule Heating

Bipolar Switching Behavior in TiN/ZnO/Pt Resistive Nonvolatile Memory with Fast Switching and Long Retention

Characterizations Of Nanoembossed Pb(Zr-0.3, Ti-0.7)O-3 Ferroelectric Films

Observation of oxygen vacancy migration in memory devices based on ZnO nanoparticles