Spin-orbit Interaction in a Dual Gated InAs/GaSb Quantum Well
Arjan J. A. Beukman,Folkert K. de Vries,Jasper van Veen,Rafal Skolasinski,Michael Wimmer,Fanming Qu,David T. de Vries,Binh-Minh Nguyen,Wei Yi,Andrey A. Kiselev,Marko Sokolich,Michael J. Manfra,Fabrizio Nichele,Charles M. Marcus,Leo P. Kouwenhoven
DOI: https://doi.org/10.1103/physrevb.96.241401
2017-01-01
Abstract:The spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field, the quantum well can be tuned between a single-carrier regime with exclusively electrons as carriers and a two-carrier regime where electrons and holes coexist. The spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single-carrier regime the linear Dresselhaus strength is characterized by beta = 28.5 meV angstrom and the Rashba coefficient a is tuned from 75 to 53 meV angstrom by changing the electric field. In the two-carrier regime a quenching of the spin splitting is observed and attributed to a crossing of spin bands.