Abstract: There is an ongoing debate about the relative importance of structural change versus doping charge carriers on the mechanism of superconductivity in Fe-based materials. Elucidating this issue is a major challenge since it would require a large number of samples where structure properties or the carrier density is systematically varied. FeSe, with its structural simplicity, is an ideal platform for addressing this question. It has been demonstrated that the superconductivity in this material can be controlled through crystal lattice tuning, as well as electronic structure manipulation. Here, we apply a high-throughput methodology to FeSe to systematically delineate the interdependence of its structural and electronic properties. Using a dual-beam pulsed laser deposition, we have generated FeSe films with a marked gradient in the superconducting transition temperature (below 2 K < Tc < 12 K) across 1 cm width of the films. The Tc gradient films display ~ 1% continuous stretch and compression in the out-of-plane and in-plane lattice constants respectively, triggering the continuous enhancement of superconductivity. Combining transport and angular-resolved photoemission measurements on uniform FeSe films with tunable Tc from 3 K to 14 K, we find that the electron carrier density is intimately correlated with Tc, i.e., it increases by a factor of 6 and ultimately surpasses the almost constant hole concentration. Our transmission electron microscope and band structure calculations reveal that rather than by shifting the chemical potential, the enhanced superconductivity is linked to the selective adjustment of the dxy band dispersion across the Fermi level by means of reduced local lattice distortions. Therefore, such novel mechanism provides a key to understand discrete superconducting phases in FeSe.

Scotch Tape Induced Strains for Enhancing Superconductivity of Fese0.5te0.5 Single Crystals

Study of Composition-Modulated Interband Transitions Characteristic and Charge Dynamics Response of High-Throughput Fese1-Xtex Combinatorial Film

Probing the Direct Factor for Superconductivity in FeSe-Based Superconductors by Raman Scattering

Preparation of Thin Crystals of FeTe1-xSx Using the Scotch-Tape Method

High-throughput investigation of tunable superconductivity in FeSe films

Promoting Superconductivity in FeSe Films Via Fine Manipulation of Crystal Lattice

Interface-induced Superconductivity and Strain-Dependent Spin Density Waves in FeSe/SrTiO3 Thin Films

Nematic Transition and Nanoscale Suppression of Superconductivity in Fe(Te,Se)

Tuning tetrahedral structure and electronic properties of FeSe films through strain engineering

Bulk Superconductivity in Fe1+yTe0.6Se0.4 Induced by Removal of Excess Fe

Magnetostriction-Induced In Situ Strain Control Of Superconductivity In Fese0.5te0.5

Electronic Structure and Superconductivity of Single-Layer FeSe on Nb:SrTiO 3 /laalo 3 with Varied Tensile Strain

Interface-Enhanced High-Temperature Superconductivity In Single-Unit-Cell Fete1-Xsex Films On Srtio3

Tuning the band structure and superconductivity in single-layer FeSe by interface engineering

Effect of Te-doping on the superconducting characteristics of FeSe single crystal

Piezostrain-induced in-plane anisotropy of superconducting transition temperature for FeSe0.5Te0.5 thin films

Enhancement of superconducting transition temperature of FeSe by intercalation of a molecular spacer layer

Systematic study on transport properties of FeSe thin films with various degrees of strain

Improving Superconducting Performance of Fe(Se, Te) with In Situ Formed Grain-Boundary Strengthening and Flux Pinning Centers

Superconductivity at T_c ~ 14 K in Single Crystalline FeTe$_{0.61}$Se$_{0.39}$

Fe-based Superconductivity with T C =31 K Bordering an Antiferromagnetic Insulator in (tl,k) Fe X Se 2