Abstract:Single-phase materials with room temperature (RT) exchange bias (EB) are very important for future applications in spintronic devices, magnetic storage, and sensors. However, such materials are rare because EB normally occurs with ferromagnetic (FM)/antiferromagnetic (AFM) boundaries. In this work, RT EB was realized by breaking the homogeneous structure of long-period Aurivillius oxides through a simple Fe/Ti content modulation. Fantastic intergrowth structures, with different neighboring layer numbers larger than 1, were first observed in this material system with optimized compositions. The intergrowth structure introduces a much larger lattice distortion and probability of Fe-O-Fe interaction, which can largely enhance the EB effect and the EB temperature. Most importantly, RT EB was finally realized in Bi10Fe6+gamma Ti3-gamma O30+delta (x = 0.2, 0.4) samples with the largest H-E of similar to 38 Oe measured at 300 K. Significantly, the concurring room temperature multiferroic behavior in such materials may add a new regulating factor for the EB through the application of an electrical field, which is meaningful for future device operations. The findings in this work alleviate the limitation of fabricating Aurivillius oxides with large layer numbers and shed new light on realizing room temperature EB in single-phase materials, with the potential for building future magnetically or electrically controlled spintronic devices.

Room Temperature Exchange Bias and Spin Valves Based on BiFeO3∕SrRuO3∕SrTiO3∕Si (001) Heterostructures

Organic spintronics: The case of Fe/Alq3/Co spin-valve devices

Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films

Engineering the Exchange Bias and Bias Temperature by Modulating the Spin Glassy State in Single Phase Bi9Fe5Ti3O27.

Room Temperature Exchange Bias in Structure-Modulated Single-Phase Multiferroic Materials

Exchange Bias in Tetragonal-Like BiFeO3/Sr2FeMoO6 Bilayer

Room temperature exchange bias in SmFeO 3 single crystal

Spin Switching Temperature Modulated by the Magnetic Field and Spontaneous Exchange Bias Effect in Single Crystal SmFeO3

Exchange Bias in Van Der Waals CrCl3/Fe3GeTe2 Heterostructures.

A Room Temperature Exchange Bias Effect Caused by the Coexisting Martensitic Phase Structures in Ni50Mn38Sb12-xGax Polycrystalline Heusler Alloys

Exchange Bias Effects in Epitaxial Fe3O4/BiFeO3 Heterostructures

Exchange bias between van der Waals materials: tilted magnetic states and field-free spin-orbit-torque switching

Spin Filtering In La0.7sr0.3mno3/Cofe2o4/Nb(0.5%): Srtio3 Heterostructures

Enhanced Exchange Bias in All-Oxide Heterostructures with Cation-Ordered Ferrimagnetic Double-Perovskite

Fe3GaTe2/MoSe2 Ferromagnet/Semiconductor 2D van der Waals Heterojunction for Room-Temperature Spin-Valve Devices

High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers

Nanoscale Control of Exchange Bias with BiFeO3 Thin Films.

Spin Rectification and Electrically Controlled Spin Transport in Molecular-Ferroelectrics-Based Spin Valves

Exchange bias and spin–orbit torque in the Fe 3 GeTe 2 -based heterostructures prepared by vacuum exfoliation approach

Room Temperature Giant Charge-to-Spin Conversion at SrTiO3/LaAlO3 Oxide Interface

Spontaneous positive exchange bias effect in SrFeO3−x/SrCoO3−x epitaxial bilayer