Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films

H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy
DOI: https://doi.org/10.1063/1.2402204
2006-09-27
Abstract:We report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 and Co electrodes. In such structures, a positive tunnel magnetoresistance up to 30% is obtained at low temperature. A second example is the exploitation of the antiferromagnetic spin structure of a BiFeO3 film to induce a sizeable (~60 Oe) exchange bias on a ferromagnetic film of CoFeB, at room temperature. Remarkably, the exchange bias effect is robust upon magnetic field cycling, with no indications of training.
Strongly Correlated Electrons,Materials Science
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