Molecular Dynamics Study of Dislocation Formation in A [001] Face-Centered-Cubic Epitaxial Island under Tensile Stress

P Liu,YW Zhang,B Fox,C Lu
DOI: https://doi.org/10.1063/1.1644343
IF: 4
2004-01-01
Applied Physics Letters
Abstract:Dislocation formation in homoepitaxial pyramidal [001] Cu islands under tensile stress is studied using molecular dynamics simulations. It is found that 90° Shockley partial dislocations are dominant in the island strain relaxation. For a low-aspect-ratio island, the dislocations are nucleated from the island surface and propagate downwards to form misfit dislocations. For a high-aspect-ratio island, a pair of the dislocations on the same slip plane are simultaneously nucleated respectively from the two island edges, propagate inwards, and react to form a 90° Shockley misfit partial dislocation. These dislocations can form sequentially and cooperatively.
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