Abstract:Crack-free AlN films with threading dislocation density (TDD) below 109 cm−2 are needed for deep-UV optoelectronics. This is typically achieved using pulsed lateral overgrowth or very thick buffer layers (>10 μm), a costly and time-consuming approach. A method for conventional metalorganic chemical vapor deposition growth of AlN/SiC films below 3 μm with greatly improved quality is presented. Focusing on substrate pretreatment before growth, we reduce average film stress from 0.9 GPa (tension) to −1.1 GPa (compression) and eliminate cracking. Next, with optimized growth conditions during initial deposition, AlN films with x-ray rocking curve widths of 123 arc-sec ( 0002) and 304 arc-sec ( 20 2 ¯ 1) are developed, and TDD is confirmed via plan view transmission electron microscopy (TEM) to be 2 × 108 cm−2. Film stress measurements including x-ray 2θ-ω, reciprocal space mapping, and curvature depict compressively stressed growth of AlN on 4H-SiC due to lattice mismatch. The thermal expansion coefficient mismatch between AlN and SiC is measured to be Δ α = α AlN − α SiC = 1.13 × 10 − 6 ° C − 1 and is found to be constant between room temperature and 1400 °C. TEM confirms the existence of dense misfit dislocation (MD) networks consistent with MD formation near SiC step edges and low MD density regions attributed to nearly coherent AlN growth on SiC terraces. These low-TDD, crack-free AlN/SiC buffers provide a platform for deep-UV optoelectronics and ultrawide bandgap electronics.

Thin Film Micro-Scaled Cold Cathode Structures of Undoped and Si-Doped Aln Grown on Sic Substrate with Low Turn-On Voltage

Effects of Si-doping on Field Emission Characteristics of AlN Films Grown on N-Type 6H-Sic by MOCVD

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode

CMOS-compatible Light-Emitting Devices Based on Thin Aluminum Nitride Film Containing Al Nanocrystals

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Progress on N‐type Doping of AlGaN Alloys on AlN Single Crystal Substrates for UV Optoelectronic Applications

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

AlN Thin Films Deposited on Different Si-based Substrates Through RF Magnetron Sputtering

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

AlN films prepared on 6H-SiC substrates under various sputtering pressures by RF reactive magnetron sputtering

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

Influence of thickness on field emission characteristics of AlN thin films

Significant Conductivity Enhancement in Al-rich N-Algan by Modulation Doping

The Growth of Sea-Urchin-Like Aln Nanostructures by Modified Cvd and Their Field Emission Properties

Electrical Properties of Al/AlN/Si MIS Structure

XPS Study of Impurities in Si‐doped AlN Film

Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition

Structure and Electrical Conductivity of Thin AlN Films on Si

Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition