Abstract:The performance of AlGaN-based light-emitting diodes (LEDs) emitting at UVAUVC regions can be severely compromised due to the polarization difference (P) between the last quantum barrier (LQB) and the electron blocking layer (EBL). In this work, the different situations of the bandgap difference (Eg) and P of InAlNAlGaN and AlGaNAlGaN heterojunctions fully strained on GaN and AlN substrates are discussed. It shows that the InAlNAlGaN heterojunctions could produce positive or negative sheet charges at the heterointerface under Eg >0, which could not be realized by the conventional AlGaNAlGaN heterojunctions. To demonstrate and utilize the feature, the polarization-modulated InAlN LQBs with 0.140.16 indium compositions of 320 nm UVB LEDs are designed and investigated. It is observed that the InAlN LQBs could replace the conventional AlGaN LQB to improve electron confinement and hole injection by affecting effective barrier heights. By modulating the LQBEBL polarization using InAlN, the proposed UV LED has a 32 enhancement in internal quantum efficiency and lower efficiency droop (from 16.9 to 0.7) compared with the conventional one without modulation. The operation voltage at the same current also significantly decreases. The improvement of optical output power and wall plug efficiency at 60 mA in proposed structures are near 90 and 100, respectively. This study provides a novel and highly effective methodology for development of high efficiency UV LEDs.

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Improved Wave Function Overlap and Carrier Confinement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Graded Composition Multiple Quantum Wells

Research on AlInGaN quaternary alloys as MQW barriers in GaN-based laser diodes

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AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes with Polarization Doping

AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer

Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

Enhanced Performance of N-polar AlGaN-based Deep-Ultraviolet Light-Emitting Diodes.

AlGaN-Based Deep UV Laser Diodes without an Electron Blocking Layer and with a Reduced Aluminum Composition of Quantum Barriers

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

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