Abstract:Low-dimensional ZnO micro/nanocrystals having high optical gain, self-constructed microcavity and large-bandgap, is the largest potential constituent for constructing droop-free and high-brightness ultraviolet light sources. In this study, we reported a workable scheme to construct high-monochromatic ultraviolet electroluminescence devices including a Ga-doped ZnO microwire decoated with platinum nanoparticles (PtNPs@ZnO:Ga MW), an AlN electron blocking layer and p-GaN layer substrate. The device exhibits a robust narrow-band ultraviolet electroluminescence peaking at around 374.8 nm and a narrowing bandwidth ∼ 13.5 nm. The electroluminescence profile is comparable with photoluminescence spectrum of ZnO:Ga MW. The device properties can be interpreted by the working mechanism of plasmonic effects, heterojunction interface engineering and optimization strategies. The AlN intermediate layer appeared in the optimized device enables effectively to tune the paths of current traveling and carrier recombination, yielding the band-edge luminescence of ZnO:Ga MW. As the device is further modified using PtNPs with desired plasmons, the optimization of heterojunction interface is significantly boosted, like the observable enhancement of holes injection efficiency, electroluminescence efficiency and interface contact, etc. Thereby, the boosted band-edge luminescence of ZnO:Ga MW can contribute to the well-being of the enhanced ultraviolet electroluminescence in our constructed LED devices. The findings are looking forward to bringing new opportunities toward the implementation of ultra-bright and high-efficiency narrow-band ultraviolet light sources, especially for the achievement of electrically-pumped microlaser devices.

Optically Pumped Lasing and Electroluminescence in Zno/Gan Nano-Heterojunction Array Devices

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Fabrication and Optically Pumped Lasing of Plasmonic Nanolaser with Regular Zno/Gan Nanoheterojunction Array

Interface Design for Electrically Pumped Ultraviolet Nanolaser from Single ZnO-nanorod

Electrically Pumped Lasing from P-Zno/N-Gan Heterojunction Diodes

Electrically Pumped Waveguide Lasing from ZnO Nanowires

Electro-Pumped Whispering Gallery Mode Zno Microlaser Array

InGaN/GaN Nanorod Arrays for a Hybrid Nanolaser

Photoluminescence Performance Enhancement Of Zno/Mgo Heterostructured Nanowires And Their Applications In Ultraviolet Laser Diodes

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

Plasmon-Microcavity Coupling and Fabry-Pe?rot Lasing in a ZnO:Ga Microwire/p-Type Gallium Nitride Heterojunction

Electrically Pumped Lasing From Single Zno Micro/Nanowire And Poly(3,4-Ethylenedioxythiophene):Poly(Styrenexulfonate) Hybrid Heterostructures

Interfacial Engineering Boosted Narrow-Band Ultraviolet LED Based on N-Ptnps@zno:Ga Microwire/aln/p-Gan Heterojunction

Surface plasmon enhanced ultraviolet emission and observation of random lasing from self-assembly Zn/ZnO composite nanowires

Structural and Optical Properties of Position-Controlled N-Zno Nanowire Arrays: Potential Applications in Optoelectronics

Electrically Driven Ultraviolet Lasing Behavior from Phosphorus-Doped P-Zno Nanonail Array/n-Si Heterojunction

Photoluminescence and Low-Threshold Lasing of ZnO Nanorod Arrays.

Photoluminescence and Lasing Properties of Catalyst-Free ZnO Nanorod Arrays Fabricated by Pulsed Laser Deposition

Electrically Pumped Single-Mode Lasing Emission of Self-Assembled N-Zno Microcrystalline Film/p-GaN Heterojunction Diode

Electrically Pumped Ultraviolet Random Lasing from P-Zno:As Based on P-Zno/N-Gan Heterojunction

Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from N-Zno/i-zno/p-gan Heterojunction Light-Emitting Diodes Via Optimizing the Thickness of MgO Spacer Layer