Abstract:In this paper, 2 atom % Al-doped ZnO (AZO) was prepared by the co-precipitation method together with sparking plasma sintering (SPS) treatment. The as-synthesized AZO powders show the morphology of hollow hexagonal towers, which result in a high porosity of 50.6% in the bulk sample consolidated by SPS sintering at 400 °C, and the porosity decreases gradually with increasing sintering temperature up to 1000 °C. Positron annihilation measurements reveal that even after sintering at 1000 °C, there are still a considerable number of small pores. A high electrical conductivity of 3 × 105 S m–1 is achieved at room temperature for the AZO sample sintered at 1000 °C, while the absolute values of Seebeck coefficient keep at relatively high values between 59 and 144 μV K–1 in the measurement temperature range of 27–500 °C, leading to a high power factor of 3.4 × 10–3 W m–1 K–2. On the other hand, the pores in AZO act as strong phonon scattering centers, and an extremely low thermal conductivity of 1.5 W m–1 K–1 measured at room temperature is obtained for AZO sintered at 400 °C. Due to the residual pores in the 1000 °C-sintered sample, the thermal conductivity is still relatively low. As a result, a maximum ZT of 0.275 measured at 500 °C is obtained in this sample, which is the highest ZT reported for ZnO around this temperature.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c16506?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c16506</a>.Thermal gravity analysis for the Al-doped ZnO (Figure S1), TEM images of Al-doped ZnO sintered at different temperatures (Figure S2), and structural characterization and thermoelectric properties of undoped ZnO prepared by co-precipitation combined with SPS treatment (Figures S3–S5) (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c16506/suppl_file/am0c16506_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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