Contact Optimisation Strategy for Wafer-Scale Field-Effect Transistors Based on Two-Dimensional Semiconductors
Ling Tong,Xiaojiao Guo,Zhangfeng Shen,Lihui Zhou,Jingyi Ma,Xinyu Chen,Honglei Chen,Yin Xia,Chuming Sheng,Saifei Gou,Die Wang,Xinyu Wang,Xiangqi Dong,Yuxuan Zhu,Xinzhi Zhang,David Wei Zhang,Sheng Dai,Xi Li,Peng Zhou,Yangang Wang,Wenzhong Bao
DOI: https://doi.org/10.1016/j.jmst.2022.05.055
2023-01-01
Journal of Material Science and Technology
Abstract:Two-dimensional (2D) semiconductors can be utilized to continually miniaturize nanoscale electronic de-vices. However, achieving a practical solution for satisfying electrical contact with 2D semiconductors remains challenging. In this study, we developed a novel contact structure with transferred multilayer (t-ML) MoS2 by integrating both edge and top contact. After in-situ plasma treatment for the edge of the MoS2 channel and successive metal deposition, we achieved 16 times lower contact resistivity (22.8 k Omega mu m) than that of the top contacted devices. The thickness-dependent electrical measurement indicates that edge contact is highly effective with thick MoS2 due to the alleviated current-crowding effect re-sulting from the small contact area. The temperature-dependent transport measurement further confirms the effective minimization of the influence from the Schottky barrier and tunnelling barrier. Finally, the simplified resistor network model and energy-band diagram were proposed to understand the carrier transport mechanism. Our work provides a practical strategy for achieving excellent electrical contact between bulk metals and 2D semiconductors, paving the way for future large-scale 2D electronic devices. (C) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.