Abstract:The continuing miniaturization of layered material electronics highlights the increasingly significant role of interfacial thermal conductance (G) in the efficient nanoscale heat dissipation in these electronics. Despite its importance, the mechanisms of thermal transport across the interfaces of layered materials and the underlying substrate remain unclear. In this work, we comprehensively investigate the interfacial thermal and phonon transport across layered-material interfaces through our ultrafast pump-probe measurements and detailed calculations on G for the interfaces of hexagonal boron nitride (h-BN), one of the most promising layered materials. We first experimentally measure G(c) for interfaces between four different metals (Al, Pd, Au and Ti) and h-BN along c-axis using time-domain thermoreflectance (TDTR) from 80 to 300 K. We successfully achieve high accuracy of our measurements with uncertainty <10 % through using the carefully chosen high modulation frequency (15.6 MHz) and relatively large laser spot size (22.5 mu m). We find that the measured G(c) for interfaces between metals (except Al) and (100) plane of h-BN is lower than that of metal/graphite interfaces, while G(c) of Al/h-BN is comparable to that of Al/graphite interfaces. Furthermore, together with our proposed anisotropic model and the diffuse mismatch model (DMM), we determine the transmission probability for the various metal/h-BN interfaces and find that the strong bonding strength enhances the phonon transmission across Ti/h-BN or Ti/graphite interfaces. Finally, we predict the orientation-dependent thermal conductance (i.e., the different interfacial thermal transport along c-axis (G(c)) and in-plane (G(ab)) crystallographic orientations) for both metal/h-BN and metal/graphite. We find G(ab) between metals and (001) plane is up to 2-3 times higher than G(c). This can be attributed to the highly anisotropic elastic properties in the h-BN and graphite. This work provides important insight into the phonon transmission mechanisms across metal/h-BN interfaces, and thus contributes significantly to the thermal management of layered material electronics.

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