Electroresistance Effect in Oxygen-Deficient La0.8Ba0.2MnO3−δ Thin Films
Guankai Lin,Haoru Wang,Xuhui Cai,Wei Tong,Hong Zhu
DOI: https://doi.org/10.1088/1361-648x/aba290
2020-01-01
Journal of Physics Condensed Matter
Abstract:Electroresistance (ER) has been intensively studied in low- and intermediate-bandwidth manganites, which possess phase separation characteristics. As for the Sr- and Ba-doped large-bandwidth manganites, however, few results about ER have been reported so far. Here we report ER effect in oxygen-deficient La0.8Ba0.2MnO3−δ thin films, which were obtained by applying a large electric current (33 mA) to the pristine films in vacuum. While the pristine film displays a negligible change in resistivity with respect to the test current, the oxygen-deficient film shows significant ER effect, i.e. ER ratio of −22% at 260 K under a test current of 0.3 mA. By gradually restoring oxygen content in the films, it is found that the ER effect is closely related to the residual resistivity at low temperatures, demonstrating the key role of grain boundaries. Furthermore, the residual resistivity can readily be tuned by heating the oxygen-deficient films in air, suggesting strong oxygen activity in the grain boundaries. The magnetoresistance (MR) data show current dependent feature, also revealing the role of grain boundaries. At 40 K, the MR ratio of the 100 °C restored film under 30 kOe increases from −15% to −25% when decreasing the test current from 1 to 10−3 mA. The large ER effect in the oxygen-deficient films is discussed based upon the conductive filament picture in grain boundaries. Our approach to controlling the ER effect through oxygen deficiency makes oxide films more promising for potential applications in the memristive devices and neuomorphic computing.