Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Great Enhancement of Near Band-Edge Emission of ZnSe Two-Dimensional Complex Nanostructures Fabricated by the Interference of Three Femtosecond Laser Beams

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Infrared Femtosecond Laser-Induced Great Enhancement of Ultraviolet Luminescence of ZnO Two-Dimensional Nanostructures

Enhancement of Two-Photon Fluorescence and Low Threshold Amplification of Spontaneous Emission of Zn-processed CuInS2 Quantum Dots

Preparation of Antireflection Microstructures on ZnSe Crystal by Femtosecond Burst Bessel Direct Laser Writing

Fabrication and Multi-Band Photoluminescence of Vertically Aligned ZnO/ZnSe Core/shell Nanorod Arrays

Optimization of GeSn Nanostructures Via Tuning of Femtosecond Laser Parameters

Fabrication Of Two-Dimensional Periodic Nanostructures By Two-Beam Interference Of Femtosecond Pulses

Enhancement of Light Emission from Nanostructured In(2)O(3) Via Surface Plasmons.

Simultaneous Formation of Two Types of Periodic Nanostructure in ZnO Single Crystal by Femtosecond Laser Direct Irradiation

Extended Photoresponse and Multi-Band Luminescence of ZnO/ZnSe Core/shell Nanorods

Band-edge emission enhancement in sputtered ZnO thin films with ultraviolet surface lattice resonances

Type-I CdSe@CdS@ZnS Heterostructured Nanocrystals with Long Fluorescence Lifetime

Near Band Edge Photoluminescence Of Zno Nanowires: Optimization Via Surface Engineering

Fabrication and optical properties of mesoporous ZnSe nanosheets@SiO2 nanocomposites

Giant Enhancement of Photoluminescence Emission in Monolayer WS2 by Femtosecond Laser Irradiation

Biomimetic moth-eye nanostructures fabricated by nanosphere lithography in ZnSe enhancing transmission in the mid-infrared

Structure and Stimulated Emission of ZnSe Nanoribbons Grown by Thermal Evaporation

Znse Nanowires Grown on the Crystal Surface by Femtosecond Laser Ablation in Air

Multiphoton Route to ZnO Nanowire Lasers.

Upconversion luminescence and optical power limiting effect based on two- and three-photon absorption processes of ZnO crystal