Abstract:As the conventional hydrogen-termination method has a limited ability to improve the interface quality between SiO2 and its Si substrate, an alternative termination method to reduce the influence of interface states is necessary. Interface engineering using first-principles calculations to suppress the influence of interface states is proposed based on the findings that silicon with dangling bonds is their primary origin. First-principles calculations indicate that the interface states can be terminated with oxygen when incorporated into the SiO2/Si interface without additional oxidation, which generates other interface states from an appropriate oxygen-anneal process. It is experimentally shown that such an oxygen termination can be realized in slow and low-temperature annealing, and the oxygen-termination method is a promising alternative for hydrogen termination. The stronger Si–O bond introduced from the oxygen termination compared with the Si–H bonds from hydrogen termination ensures a better interface quality. As one oxygen atom terminates two silicon atoms, the oxygen-termination method can efficiently suppress the number of interface defects compared with hydrogen and fluorine termination. The mobility degradation due to the interface states was improved more from oxygen termination than from hydrogen termination because the strength of Coulomb scattering due to Si–O dipoles is reduced from the heavier oxygen mass. Theoretical predictions were verified using experiments, indicating that the oxygen-termination method under appropriately optimized annealing conditions (speed and temperature) is a promising candidate to improve the interface quality by reducing the influence of interface states.

Analysis of the Kinetics for Interface State Generation Following Hole Injection

Interface State Generation After Hole Injection

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On the Mechanism for Interface Trap Generation in MOS Transistors Due to Channel Hot Carrier Stressing

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Investigation of Stress Induced Interface States in Al2o3/Ingaas Metal-Oxide-Semiconductor Capacitors

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New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Hole traps in silicon dioxides. Part I. Properties

Distinguishing Interfacial Hole Traps in (110), (100) High-K Gate Stack.

Interface Trap Generation and Recovery Mechanisms During and after Positive Bias Stress in Metal-Oxide-semiconductor Structures

An Alternative Approach for Modeling the Hot Carrier Degradation of the Si/SiO 2 Interface

Mechanism for hot-carrier-induced interface trap generation in MOS transistors

A New Charge-Pumping Measurement Technique for Lateral Profiling of Interface States and Oxide Charges in MOSFETs

Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/ β -Ga2O3 metal-oxide-semiconductor capacitors

Interface defect engineering for high-performance MOSFETs with novel carrier mobility model: Theory and experimental verification

Electronically Induced Defect Creation at Semiconductor/oxide Interface Revealed by Time-Dependent Density Functional Theory

Effects of Hydrogen on Positive Charges in Gate Oxides