Abstract:Core-shell structured SiC/SiO2 nanowires (SiC/SiO2 NWs) were synthesized by a simple thermal evaporation method without a catalyst. The influence of the growth temperature and holding time on the microstructure and composition of the nanowires were investigated. The results indicate that within the temperature range of 1150 to 1550 degrees C, the color of SiC/SiO2 nanowires gradually transitions from pure white to off-white with increasing temperature. During this process, the average diameter of SiC/SiO2 increases from 74 nm to 291 nm, while the surface SiO2 layer thickness decreases from 17 nm to 5 nm, with nanowires can reach lengths of hundreds of micrometres. Variations in supersaturation of SiO and CO at different temperatures lead to discrepancies in nanowire diameter and SiO2 shell thickness. At 1350 degrees C, prolonged holding time enhances silicon powder reaction, resulting in increased structural disorder of the obtained SiC/SiO2 nanowires. The nanowire growth follows a vapor-solid (V-S) mechanism. Additionally, the study demonstrates that the photoluminescence (PL) characteristics of the nanowires exhibit a blue shift attributable to their nanoscale dimensions, while variations in emission spectra correlate with stacking faults, SiC diameter, and SiO2 thickness. This work may be provide a theoretical basis for preparing SiC/SiO2 nanowires with different diameters and SiO2 shell thicknesses, which is crucial for advancing the development and application of SiC/SiO2 nanoceramics.

Growth Of Tapered Silica Nanowires With A Shallow U-Shaped Vapor Chamber: Growth Mechanism And Structural And Optical Properties

Ultrafast growth of single-crystalline Si nanowires

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Tiny silicon nano-wires synthesis on silicon wafers

Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties.

Growth morphology and micro-structural aspects of Si nanowires synthesized by laser ablation

Synthesis and photoluminescence of aligned straight silica nanowires on Si substrate

Mass Transport Determined Silica Nanowires Growth on Spherical Photonic Crystals with Nanostructure-Enabled Functionalities

Microscopy Study of the Growth Process and Structural Features of Closely Packed Silica Nanowires

The Growth Mechanism of Silicon Nanowires and Their Quantum Confinement Effect

A growth mechanism of Si nanowires synthesized by gas condensation of SiO without any catalyst

Growth and Photoluminescence of Si-SiOx Nanowires by Catalyst-Free Chemical Vapor Deposition Technique

In-situ Synthesis of SiC/SiO2 Nanowires by Catalyst-Free Thermal Evaporation of Silicon Powder and Their Photoluminescence Properties

Controllable growth of high-density tapered N-doped SiC nanowires arrays

Sn-Catalyst Growth and Optical Waveguide of Ultralong Cds Nanowires

The Structure and Optical Properties of Silicon Nanowires Prepared by Inductively Coupled Plasma Chemical Vapor Deposition

Investigation of the Growth Process of Si Nanowires Using the Vapour-Liquid-solid Mechanism

A Versatile Chemical Vapor Deposition Method to Synthesize One-Dimensional Silica-Sheathed Nanostructures

Synthesis and light emission of fine and straight Si nanowires