Abstract:Electrostatic catalysis has been an exciting development in chemical synthesis (beyond enzymes catalysis) in recent years, boosting reaction rates and selectively producing certain reaction products. Most of the studies to date have been focused on using external electric field (EEF) to rearrange the charge distribution in small molecule reactions such as Diels-Alder addition, carbene reaction, etc. However, in order for these EEFs to be effective, a field on the order of 1 V/nm (10 MV/cm) is required, and the direction of the EEF has to be aligned with the reaction axis. Such a large and oriented EEF will be challenging for large-scale implementation, or materials growth with multiple reaction axis or steps. Here, we demonstrate that the energy band at the tip of an individual single-walled carbon nanotube (SWCNT) can be spontaneously shifted in a high-permittivity growth environment, with its other end in contact with a low-work function electrode (e.g., hafnium carbide or titanium carbide). By adjusting the Fermi level at a point where there is a substantial disparity in the density of states (DOS) between semiconducting (s-) and metallic (m-) SWCNTs, we achieve effective electrostatic catalysis for s-SWCNT growth assisted by a weak EEF perturbation (200V/cm). This approach enables the production of high-purity (99.92%) s-SWCNT horizontal arrays with narrow diameter distribution (0.95+-0.04 nm), targeting the requirement of advanced SWCNT-based electronics for future computing. These findings highlight the potential of electrostatic catalysis in precise materials growth, especially for s-SWCNTs, and pave the way for the development of advanced SWCNT-based electronics.

Alternating Current Dielectrophoresis of Carbon Nanotubes

Dielectrophoretic Behavior of Ionic Surfactant-Solubilized Carbon Nanotubes

Self-aligned Electrodes for Suspended Carbon Nanotube Structures

Reversible Surface Functionalization of Carbon Nanotubes for Fabrication of Field-Effect Transistors

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Tunable Assembly of Superfine Single-Walled Carbon Nanotube Fibers

Direct measurement of charge transport through helical poly(ethyl propiolate) nanorods wired into gaps in single walled carbon nanotubes.

Fabrication of Carbon Nanotubes on Interdigitated Metal Electrode for Switchable Nanophotonic Devices

Suspended Multiwalled Carbon Nanotubes As Self-Aligned Evaporation Masks.

Self-aligned Split Gate Electrodes Fabricated on Suspended Carbon Nanotubes

Fabrication of A Nanoelectromechanical Switch Using A Suspended Carbon Nanotube

Ultra-high density alignment of carbon nanotubes array by dielectrophoresis

Large-scale directed assembly of single-walled carbon nanotube devices by alternating current coupling dielectrophoresis

Fabrication of carbon nanotube field effect transistors by AC dielectrophoresis method

Low-Temperature, Directly Depositing Individual Single-Walled Carbon Nanotubes for Fabrication of Suspended Nanotube Devices

Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene.

Dielectrophoretic Assembly of Carbon Nanotube Chains in Aqueous Solution

Electric field and tip geometry effects on dielectrophoretic growth of carbon nanotube nanofibrils on scanning probes

Remote-contact catalysis for target-diameter semiconducting carbon nanotube array

Simultaneous dielectrophoretic separation and assembly of single-walled carbon nanotubes on multigap nanoelectrodes and their thermal sensing properties.

DNA Functionalization of Carbon Nanotubes for Ultra-Thin Atomic Layer Deposition of High k Dielectrics for Nanotube Transistors with 60mV/decade Switching