Range Profiles of Xe+ and Xe-2+ of Energy 50 to 400 Kev in Quartz Crystal

KM WANG,BR SHI,HY GUO,JT LIU,XD LIU,C LU
DOI: https://doi.org/10.1063/1.345487
IF: 2.877
1990-01-01
Journal of Applied Physics
Abstract:The Rutherford backscattering technique has been used to determine the depth profile of Xe+ and Xe2+ implanted into amorphized quartz crystal at energies from 50 to 400 keV. Based on Biersack’s angular diffusion model, an efficient method has been developed for comparison with experimental data. The results show that the measured mean projected range is in quite good agreement with calculated value for first-order treatment. A marked improvement in range straggling is obtained after considering the second order energy loss. Also the results are compared to transport of ions in matter prediction.
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