Abstract:The question of stability against diffusional mixing at the prototypical LaAlO3/SrTiO3(001) interface is explored using a multi-faceted experimental and theoretical approach. We combine analytical methods with a range of sensitivities to elemental concentrations and spatial separations to investigate interfaces grown using on-axis pulsed laser deposition. We also employ computational modeling based on the density function theory as well as classical force fields to explore the energetic stability of a wide variety of intermixed atomic configurations relative to the idealized, atomically abrupt model. Statistical analysis of the calculated energies for the various configurations is used to elucidate the relative thermodynamic stability of intermixed and abrupt configurations. We find that on both experimental and theoretical fronts, the tendency toward intermixing is very strong. We have also measured and calculated key electronic properties such as potential energy gradients and valence band discontinuity at the interface. We find no measurable electric field in either the LaAlO3 or SrTiO3, and that the valence band offset is near zero, partitioning the band discontinuity almost entirely to the conduction band edge. Significantly, we find it is not possible to account for these electronic properties theoretically without including extensive intermixing in our physical model of the interface. The atomic configurations which give the greatest electrostatic stability are those that eliminate the interface dipole by intermixing, calling into question the conventional explanation for conductivity at this interface—electronic reconstruction. Rather, evidence is presented for La indiffusion and doping of the SrTiO3 below the interface as being the cause of the observed conductivity.

Energy-Level Alignment at the Alq(3)/Fe3o4(001) Interface

Energy Level Alignment at Alq/metal Interfaces

Electronic structure and energy level alignment of Alq3/Al2O3/Al and Alq3/Al interfaces studied by ultraviolet photoemission spectroscopy

Quasiparticle level alignment for photocatalytic interfaces

Chemical Reaction Between Lif And Al With Or Without The Presence Of Alq(3)

Tuning the Electron Gas at an Oxide Heterointerface Via Free Surface Charges

Band Alignment at the Al2O3/β-Ga2O3 Interface with CHF3 Treatment*

High-resolution Electron-Energy-loss Spectroscopy Study on the Reaction of MgF2 with Alq3(8-hydroxy-quinoline)aluminum

Energy Level Alignment in Organic-Organic Heterojunctions: The TTF-TCNQ Interface

Directly Unveiling the Energy Transfer Dynamics between Alq 3 Molecules and Si by Ultrafast Optical Pump-Probe Spectroscopy

Impact of Molecule-Dipole Orientation on Energy Level Alignment at the Submolecular Scale

Band Alignment at the Al2O3/β-Ga2O3 Interface with CHF3 Treatment

Energy Level Alignment At The C-60/Monolayer-Ws2 Interface On Insulating And Conductive Substrates

Surface Termination and Stoichiometry of LaAlO3(001) Surface Studied by HRTEM

Interfacial Chemistry and Energy Band Alignment of TiAlO on 4H-Sic Determined by X-ray Photoelectron Spectroscopy

Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction

Interfacial energy barrier height of Al$_2$O$_3$/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy

Mapping Band Alignment Across Complex Oxide Heterointerfaces

Energy‐Level Alignment at the Organic/Electrode Interface in Organic Optoelectronic Devices

Band Alignment at the Al<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> Interface with CHF<sub>3</sub> Treatment<sup>*</sup>

Cation Mixing, Band Offsets and Electric Fields at LaAlO3/SrTiO3(001) Heterojunctions with Variable La:Al Atom Ratio