Abstract:Wide bandgap (WBG) semiconductors (Eg >2.0 eV) are integral to the advancement of next generation electronics, optoelectronics, and power industries, owing to their capability for high temperature operation, high breakdown voltage and efficient light emission. Enhanced power efficiency and functional performance can be attained through miniaturization, specifically via the integration of device fabrication into two-dimensional (2D) structure enabled by WBG 2D semiconductors. However, as an essential subgroup of WBG semiconductors, 2D transition metal oxides (TMOs) remain largely underexplored in terms of physical properties and applications in 2D opto-electronic devices, primarily due to the scarcity of sufficiently large 2D crystals. Thus, our goal is to develop synthesis pathways for 2D TMOs possessing large crystal domain (e.g. >10 nm), expanding the 2D TMOs family and providing insights for future engineering of 2D TMOs. Here, we demonstrate the synthesis of WBG 2D nickel oxide (NiO) (Eg > 2.7 eV) thermally converted from 2D nickel hydroxide (Ni(OH)2) with the lateral domain size larger than 10 um. Moreover, the conversion process is investigated using various microscopic techniques such as atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), providing significant insights on the morphology and structure variation under different oxidative conditions. The electronic structure of the converted NixOy is further investigated using multiple soft X-ray spectroscopies, such as X-ray absorption (XAS) and emission spectroscopies (XES).

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