Electron-Insulator Interaction And Secondary Electron Yield At Any Kelvin Temperature
Ai-Gen Xie,Hong-Jie Dong,Zheng Pan
DOI: https://doi.org/10.1016/j.rinp.2021.104554
IF: 4.565
2021-01-01
Results in Physics
Abstract:The universal formulae for lambda(chi(real), E-g, T) and lambda(chi(real), E-g, T)(p) of insulator having less impurities are experimentally proved, where lambda(chi(real), E-g, T) is the mean escape depth at Kelvin temperature T of secondary electrons emitted from insulators with band gap E-g and efficient electron affinity areal, lambda(chi(real), E-g, T)(p) is the lambda(chi(real), E-g, T) due to electron-lattice interaction. Based on the mechanism of electron-insulator interaction, experimental data, existing formulae, ESTAR program and formulae for lambda(chi(real), E-g, T) and lambda(chi(real), E-g, T)(p) of insulator having less impurities, the methods of obtaining lambda(chi(real), E-g, T)(e-)(e), lambda(chi(real), E-g, T)(e-)(defect) and lambda(chi(real), E-g, T)(i) are presented, where lambda(chi(real), E-g, T)(e-)(e) is the lambda(chi(real), E-g, T) due to electron-electron interaction, lambda(chi(real), E-g, T)(e-defect) is the lambda(chi(real), E-g, T) due to electron-defect interaction, lambda(chi(real), E-g, T)(i) is the lambda(chi(real), E-g, T) due to electron-impurity interaction. The lambda(chi(real), E-g, T)(p), lambda(chi(real), E-g, T)(e-)(e), lambda(chi(real), E-g, T)(e-defect) and lambda(chi(real), E-g, T)(i) can provide corresponding information regarding electron-insulator interaction. Thus, it can be concluded that the method of investigating electroninsulator interaction by secondary electron emission SEE is successfully presented in this work. According to experimental data, formula for lambda(chi(real), E-g, T), ESTAR program, calculated parameters of primary range and existing formulae for SEE, the method of calculating the delta at different T and in the range of 1.0 keV <= E-po <= 100.0 keV from insulator having less impurities is successfully presented, where delta is secondary electron yield, E-po is incident energy of primary electron.