Abstract:On the basis of the characteristic of secondary electron emission, the number of secondary electrons (delta(PE theta)) released per primary electron entering metals in the incident energy (W-p0) range 10-102 keV and the incident angle (theta) range 0-89 degrees was deduced. In addition, the number of secondary electrons released per primary electron entering metals at theta=0 (delta(PE0)) was obtained. Based on the deduced delta(PE theta), the characteristic of the emission angle distribution of the backscattered electrons and the definition of beta(theta), the relationships among beta(theta), cos theta and the parameter x were given, where beta(theta) is the ratio of the average number of secondary electrons generated by a single backscattered electron to that generated by a single primary electron entering the emitter at theta. Considering the relationship between delta(PE theta) and delta(PE0) and the relationship between the secondary electron yields at W-p0=10-102 keV and theta=0-89 degrees (delta(theta)) and the secondary electron yields at theta=0(delta(0)), a universal formula for expressing delta(theta) through delta(0), the backscattered coefficient at theta (eta(theta)), the backscattered coefficient at theta=0(eta(0)), cos theta and the parameter x were deduced. Further, the parameters x related to beryllium, uranium, aluminium and copper were computed with the deduced formula and experimental results; then, the formulae for expressing delta(theta) from the four metals through delta(0), eta(theta), eta(0) and cos theta were obtained; and the relationships between beta(theta) of the four metals and cos theta were found. The delta(theta) calculated with the formulae and the yields measured experimentally were compared. Finally, it is concluded that the formulae for delta(theta) and beta(theta) from the four metals at W-p0=10-102 keV and theta=0-89 degrees have been established, respectively.

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Secondary electron emission from insulators and negative electron affinity semiconductors

Relation Between the Incident Angle of High Energy Primary Electron of Metal and the Real Efficient Emission Coefficient of Secondary Electron

Relation of Incident Energy of High Energy Primary Electron and Real Efficient Secondary Electron Emission Coefficient of Metal Emitter

The Dose Effect in Secondary Electron Emission

Pan‐Spectrum Fitting Formula for Suprathermal Particles

Design and Research of Secondary Electron Emission Test Equipment with Low Electron Energy

Measurements of the Secondary Electron Emission from Rare Gases at 4.2K

A calculation approach for current density distribution evolution of secondary electrons using differential algebra method

The Effect of Electron Distribution Function Anisotropy on Space Charge Saturated Sheath Critical Parameters in Hall Thrusters

Secondary Electron Emission from Surfaces with Small Structure

Research on the secondary electron yield of TiZrV-Pd thin film coatings

Secondary electron emission and photoelectric emission with account of excited electrons' moving backward emission surface

Monte Carlo simulation study of electron yields from compound semiconductor materials

Numerical Study on Effects of Secondary Electrons Generated by Temp Ii Accelerator

Effect of rectangular grooves and checkerboard patterns on the electron emission yield

General Spectrum Fitting for Energetic Particles

Influence of the Method of Calculating the Effective Atomic Number on the Estimate of Fluorescence Yield for Metal Alloys of Biomedical Interest

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Effects of a Monoenergetic Electron Beam on the Plasma Sheath in the Presence of Secondary Electron Emission