Electrical Properties of PMN–PZT Film on Silicon Lens

Jun Ou-Yang,Benpeng Zhu,Xinxin Yan,Jinyan Zhao,Wei Ren,Xiaofei Yang
DOI: https://doi.org/10.1016/j.ceramint.2014.11.090
IF: 5.532
2015-01-01
Ceramics International
Abstract:A polycrystalline PMN–PZT film with a composition close to the morphotropic phase boundary (MPB) and a thickness of approximately 2μm was successfully prepared on a silicon lens using the sol-gel method. This film exhibited excellent dielectric, ferroelectric, and piezoelectric behavior. A dielectric constant (εr) of 1756 at 1kHz, a remnant polarization (Pr) of 22μC/cm2, and an effective piezoelectric coefficient (d33,f) of 150pm/V were obtained, indicating that PMN–PZT film on silicon lens is a promising candidate for tightly focused ultra-high ultrasound transducer applications.
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