Strain Away

Jinfeng Jia

DOI: https://doi.org/10.1038/nphys2936

IF: 19.684

2014-01-01

Nature Physics

Abstract:Surface states are the salient feature of topological insulators. Now, experiments demonstrate that surface states can be enhanced or destroyed by applying compressive or tensile strain.

What problem does this paper attempt to address?

Strain engineering Dirac surface states in heteroepitaxial topological crystalline insulator thin films

Ilija Zeljkovic,Daniel Walkup,Badih A Assaf,Kane L Scipioni,R Sankar,Fangcheng Chou,Vidya Madhavan

DOI: https://doi.org/10.1038/nnano.2015.177

Abstract:The unique crystalline protection of the surface states in topological crystalline insulators has led to a series of predictions of strain-generated phenomena, from the appearance of pseudo-magnetic fields and helical flat bands to the tunability of Dirac surface states by strain that may be used to construct 'straintronic' nanoswitches. However, the practical realization of this exotic phenomenology via strain engineering is experimentally challenging and is yet to be achieved. Here, we have designed an experiment to not only generate and measure strain locally, but also to directly measure the resulting effects on Dirac surface states. We grew heteroepitaxial thin films of topological crystalline insulator SnTe in situ and measured them using high-resolution scanning tunnelling microscopy to determine picoscale changes in the atomic positions, which reveal regions of both tensile and compressive strain. Simultaneous Fourier-transform scanning tunnelling spectroscopy was then used to determine the effects of strain on the Dirac electrons. We find that strain continuously tunes the momentum space position of the Dirac points, consistent with theoretical predictions. Our work demonstrates the fundamental mechanism necessary for using topological crystalline insulators in strain-based applications.
Design of Strain-Engineered Quantum Tunneling Devices for Topological Surface States

L. Zhao,Junwei Liu,Peizhe Tang,Wenhui Duan

DOI: https://doi.org/10.1063/1.3699023

IF: 4

2012-01-01

Applied Physics Letters

Abstract:Strain-dependent charge and spin transport on a topological insulator (TI) surface are investigated by combining first-principles calculations with quantum tunneling theory. It is shown that the Dirac point of helical surface states can be significantly shifted by applying compressive uniaxial strain. As an example of strain engineering applications based on this effect, a strain-induced quantum tunneling nanostructure is designed, where the tunneling conductance and the spin texture of surface states can be sensitively modulated by strain. Our work suggests that various local strain patterns can be integrated to manipulate surface states in all-TI-based spintronic nanodevices.
Tuning Surface Dirac Valleys by Strain in Topological Crystalline Insulators

Lu Zhao,Jianfeng Wang,Bing-Lin Gu,Wenhui Duan

DOI: https://doi.org/10.1103/physrevb.91.195320

2017-01-01

Abstract:A topological crystalline insulator has an even number of Dirac cones (i.e., multiple valleys) in its surface band structure, thus potentially leading to valleytronic applications such as graphene. Using the density-functional-theory method, we systematically investigate the strain-induced evolution of topological surface states on the SnTe(111) surface. Our results show that compressive strain can shift the Dirac cones at the (Gamma) over bar and (M) over bar valleys to different extents (even oppositely) in energy, while the tensile strain can induce different band gaps at the valleys due to the enhanced penetration depths of surface states. Exploiting a strain-induced nanostructure with well-defined edges on the (111) surface, we demonstrate strong valley-selective filtering for massless Dirac fermions by dynamically applying local external pressure. Our findings may pave the way for strain-engineered valley-resolved manipulation of Dirac fermions with high tunability and scalability.
Strain-engineered Surface Transport in Si(001): Complete Isolation of the Surface State Via Tensile Strain.

Miao Zhou,Zheng Liu,Zhengfei Wang,Zhaoqiang Bai,Yuanping Feng,Max G. Lagally,Feng Liu

DOI: https://doi.org/10.1103/physrevlett.111.246801

IF: 8.6

2013-01-01

Physical Review Letters

Abstract:By combining density functional theory, nonequilibrium Green's function formulism and effective-Hamiltonian approaches, we demonstrate strain-engineered surface transport in Si(001), with the complete isolation of the Si surface states from the bulk bands. Our results show that sufficient tensile strain can effectively remove the overlap between the surface valence state and the bulk valence band, because of the drastically different deformation potentials. Isolation of the surface valence state is possible with a tensile strain of ∼1.5%, a value that is accessible experimentally. Quantum transport simulations of a chemical sensing device based on strained Si(001) surface confirm the dominating surface conductance, giving rise to an enhanced molecular sensitivity. Our results show promise for using strain engineering to further our ability to manipulate surface states for quantum information processing and surface state-based devices.
Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

Hugo Aramberri,M. Carmen Muñoz

DOI: https://doi.org/10.1103/PhysRevB.95.205422

2017-05-02

Abstract:Strain can induce a topological phase transition in bismuth dichalcogenides. We present the phase diagram for 3D topological insulators Bi$_2$Te$_3$, Sb$_2$Te$_3$, Bi$_2$Se$_3$ and Sb$_2$Se$_3$ with uniaxial and biaxal strain, which show metallic and insulating phases, both topologically trivial and non-trivial. In particular, uniaxial tension can drive Sb$_2$Te$_3$ into a topologically trivial insulating phase. Thus, we propose a Sb$_2$Te$_3$/Bi$_2$Te$_3$ heterojunction in which a topological interface state arises in the common gap of this topological insulator-normal insulator heterojunction that can be switched on or off by means of uniaxial strain. This interface state is confined in the Sb$_2$Te$_3$ subsystem and is physically protected from ambient impurities. Therefore, Sb$_2$Te$_3$/Bi$_2$Te$_3$ heterojunctions can host robust helical interface states with promising spintronic applications.

Mesoscale and Nanoscale Physics,Materials Science
Strain Induced Novel Quantum Magnetotransport Properties of Topological Insulators

Ning Ma,Shengli Zhang,Daqing Liu

DOI: https://doi.org/10.1016/j.aop.2016.10.003

IF: 3.036

2016-01-01

Annals of Physics

Abstract:Recent theoretical and experimental researches have revealed that the strained bulk HgTe can be regarded as a three-dimensional topological insulator (TI). Motivated by this, we explore the strain effects on the transport properties of the HgTe surface states, which are modulated by a weak 1D in-plane electrostatic periodic potential in the presence of a perpendicular magnetic field. We analytically derive the zero frequency (dc) diffusion conductivity for the case of quasielastic scattering in the Kubo formalism, and find that, in strong magnetic field regime, the Shubnikov–de Haas oscillations are superimposed on top of the Weiss oscillations due to the electric modulation for null and finite strain. Furthermore, the strain is shown to remove the degeneracy in inversion symmetric Dirac cones on the top and bottom surfaces. This accordingly gives rise to the splitting and mixture of Landau levels, and the asymmetric spectrum of the dc conductivity. These phenomena, not known in a conventional 2D electron gas and even in a strainless TI and graphene, are a consequence of the anomalous spectrum of surface states in a fully stained TI. These results should be valuable for electronic and spintronic applications of TIs, and thus we fully expect to see them in the further experiment.
Artificial Gravity Field, Astrophysical Analogues, and Topological Phase Transitions in Strained Topological Semimetals

Shan Guan,Zhi-Ming Yu,Ying Liu,Gui-Bin Liu,Liang Dong,Yunhao Lu,Yugui Yao,Shengyuan A. Yang

DOI: https://doi.org/10.1038/s41535-017-0026-7

2017-01-01

Abstract:Effective gravity and gauge fields are emergent properties intrinsic for low-energy quasiparticles in topological semimetals. Here, taking two Dirac semimetals as examples, we demonstrate that applied lattice strain can generate warped spacetime, with fascinating analogues in astrophysics. Particularly, we study the possibility of simulating black-hole/white-hole event horizons and gravitational lensing effect. Furthermore, we discover strain-induced topological phase transitions, both in the bulk materials and in their thin films. Especially in thin films, the transition between the quantum spin Hall and the trivial insulating phases can be achieved by a small strain, naturally leading to the proposition of a novel piezo-topological transistor device. Possible experimental realizations and analogue of Hawking radiation effect are discussed. Our result bridges multiple disciplines, revealing topological semimetals as a unique table-top platform for exploring interesting phenomena in astrophysics and general relativity; it also suggests realistic materials and methods to achieve controlled topological phase transitions with great potential for device applications.
Strain-induced Insulator–metal Transition in Ferroelectric BaTiO 3 (001) Surface: First-principles Study

Lin Yang,Chang-An Wang,Cong Liu,Ming-Hui Qin,Xu-Bing Lu,Xing-Sen Gao,Min Zeng,Jun-Ming Liu

DOI: https://doi.org/10.1088/1674-1056/25/7/077302

2016-01-01

Chinese Physics B

Abstract:The electronic properties of TiO2-terminated BaTiO3 (001) surface subjected to biaxial strain have been studied using first-principles calculations based on density functional theory. The Ti ions are always inward shifted either at compressive or tension strains, while the inward shift of the Ba ions occurs only for high compressive strain, implying an enhanced electric dipole moment in the case of high compressive strain. In particular, an insulator–metal transition is predicted at a compressive biaxial strain of 0.0475. These changes present a very interesting possibility for engineering the electronic properties of ferroelectric BaTiO3 (001) surface.
Manipulating Topological Phase Transition by Strain.

Junwei Liu,Yong Xu,Jian Wu,Bing-Lin Gu,S. B. Zhang,Wenhui Duan

DOI: https://doi.org/10.1107/s2053229613032336

2014-01-01

Acta Crystallographica Section C Structural Chemistry

Abstract:First-principles calculations show that strain-induced topological phase transition is a universal phenomenon in those narrow-gap semiconductors for which the valence band maximum (VBM) and conduction band minimum (CBM) have different parities. The transition originates from the opposite responses of the VBM and CBM, whose magnitudes depend critically on the direction of the applied strain. Our work suggests that strain can play a unique role in tuning the electronic properties of topological insulators for device applications, as well as in the achievement of new topological insulators.
Strain Engineering: Electromechanical Properties of Graphene

Shuze Zhu

DOI: https://doi.org/10.1002/9781119468455.ch26

2019-01-01

Abstract:This chapter contains sections titled: The Era of Strain Engineering of Graphene Electronic Dispersion of Graphene and Dirac Fermions Dirac Fermions in External Magnetic Field and Landau Levels Dirac Hamiltonian of Graphene in Strain Field and Pseudomagnetic Field The Coupling between Strain Field and Hopping Energy The Coupling between Strain Field and Pseudomagnetic Field Pseudo Landau Levels and Pseudospin Polarization Strain-Induced Pseudomagnetic Field Greater Than 300 T Graphene Drumheads and On-Demand Activation of Pseudomagnetic Field Strain Engineering of Pseudomagnetic Field: Triaxial Stretching Strain Engineering of Pseudomagnetic Field: Uniaxial Stretching Strain Engineering towards Topological Insulators and Valleytronics Summary
Strain Characterization in Two-Dimensional Crystals.

Shizhe Feng,Zhiping Xu

DOI: https://doi.org/10.3390/ma14164460

IF: 3.4

2021-01-01

Materials

Abstract:Two-dimensional (2D) crystals provides a material platform to explore the physics and chemistry at the single-atom scale, where surface characterization techniques can be applied straightforwardly. Recently there have been emerging interests in engineering materials through structural deformation or transformation. The strain field offers crucial information of lattice distortion and phase transformation in the native state or under external perturbation. Example problems with significance in science and engineering include the role of defects and dislocations in modulating material behaviors, and the process of fracture, where remarkable strain is built up in a local region, leading to the breakdown of materials. Strain is well defined in the continuum limit to measure the deformation, which can be alternatively calculated from the arrangement of atoms in discrete lattices through methods such as geometrical phase analysis from transmission electron imaging, bond distortion or virial stress from atomic structures obtained from molecular simulations. In this paper, we assess the accuracy of these methods in quantifying the strain field in 2D crystals through a number of examples, with a focus on their localized features at material imperfections. The sources of errors are discussed, providing a reference for reliable strain mapping.
Material Realization of Topological Crystalline Insulators: Role of Strain and Spin-Orbit Coupling

Chengwang Niu,Ying Dai,Yandong Ma,Lin Yu,Baibiao Huang

DOI: https://doi.org/10.1166/mex.2013.1112

2013-01-01

Materials Express

Abstract:Taking into consideration of the mirror symmetry gives rise to a new phase of quantum matter, called topological crystalline insulator (TCI). Here, using SnTe and PbTe as the examples, we give detailed insight into the effects of spin-orbit coupling (SOC) and strain on the formation of the TCI. A strain-induced band inversion, without any SOC, is shown. The SOC, however, is indispensable for achieving the TCI phase in real materials and can promote the process of the band inversion. Detailed surface state analysis reveals that topological surface state is thickness dependent and the Dirac point can locate precise on or slightly away from the mirror-symmetry point. Our results pave a way of the material realization of new topological crystalline insulator.
Dynamics of Terraces on a Silicon Surface Due to the Combined Action of Strain and Electric Current

Wei Hong,Zhigang Suo,Zhenyu Zhang

DOI: https://doi.org/10.1016/j.jmps.2007.03.015

IF: 5.582

2007-01-01

Journal of the Mechanics and Physics of Solids

Abstract:A (001) surface of silicon consists of terraces of two variants, which have an identical atomic structure, except for a 90° rotation. We formulate a model to evolve the terraces under the combined action of electric current and applied strain. The electric current motivates adatoms to diffuse by a wind force, while the applied strain motivates adatoms to diffuse by changing the concentration of adatoms in equilibrium with each step. To promote one variant of terraces over the other, the wind force acts on the anisotropy in diffusivity, and the applied strain acts on the anisotropy in surface stress. Our model reproduces experimental observations of stationary states, in which the relative width of the two variants becomes independent of time. Our model also predicts a new instability, in which a small change in experimental variables (e.g., the applied strain and the electric current) may cause a large change in the relative width of the two variants.
The Substrate Strain Mediated Magnetotransport Properties of Surface States in Topological Insulators

Ning Ma,Shengli Zhang,Daqing Liu

DOI: https://doi.org/10.1016/j.physleta.2016.08.054

IF: 2.707

2016-01-01

Physics Letters A

Abstract:Recent experiments reveal that the strained bulk HgTe can be regarded as a three-dimensional topological insulator (TI). We further explore the strain effects on magnetotransport in HgTe at magnetic field. We find that the substrate strain associated with the surface index of carriers, can remove the surfaces degeneracy in Landau levels. This accordingly induces the well separated surface quantum Hall plateaus and Shubnikov–de Haas oscillations. These results can be used to generate and detect surface polarization, not only in HgTe but also in a broad class of TIs, which would be very great news for electronic applications of TIs.
Interplay of orbital effects and nanoscale strain in topological crystalline insulators

Daniel Walkup,Badih Assaf,Kane L Scipioni,R. Sankar,Fangcheng Chou,Guoqing Chang,Hsin Lin,Ilija Zeljkovic,Vidya Madhavan

DOI: https://doi.org/10.1038/s41467-018-03887-5

2016-11-05

Abstract:Orbital degrees of freedom can have pronounced effects on the fundamental properties of electrons in solids. In addition to influencing bandwidths, gaps, correlation strength and dispersion, orbital effects have also been implicated in generating novel electronic and structural phases, such as Jahn-Teller effect and colossal magnetoresistance. In this work, we show for the first time how the orbital nature of bands can result in non-trivial effects of strain on the band structure. We use scanning tunneling microscopy and quasiparticle interference imaging to study the effects of strain on the electronic structure of a heteroepitaxial thin film of a topological crystalline insulator, SnTe. We find a surprising effect where strain applied in one direction affects the band structure in the perpendicular direction. Our theoretical calculations indicate that this effect directly arises from the orbital nature of the conduction and valance bands. Our results imply that a microscopic model capturing strain effects on the band structure must include a consideration of the orbital nature of the bands.

Mesoscale and Nanoscale Physics,Materials Science
Strain Tunable Semimetal–Topological-Insulator Transition in Monolayer 1 T ′ − WTe 2

Chenxiao Zhao,Mengli Hu,Jin Qin,Bing Xia,Canhua Liu,Shiyong Wang,DanDan Guan,Yaoyi Li,Hao Zheng,Junwei Liu,Jinfeng Jia

DOI: https://doi.org/10.1103/physrevlett.125.046801

IF: 8.6

2020-07-24

Physical Review Letters

Abstract:A quantum spin hall insulator is manifested by its conducting edge channels that originate from the nontrivial topology of the insulating bulk states. Monolayer 1T^{'}-WTe_{2} exhibits this quantized edge conductance in transport measurements, but because of its semimetallic nature, the coherence length is restricted to around 100 nm. To overcome this restriction, we propose a strain engineering technique to tune the electronic structure, where either a compressive strain along the a axis or a tensile strain along the b axis can drive 1T^{'}-WTe_{2} into an full gap insulating phase. A combined study of molecular beam epitaxy and in situ scanning tunneling microscopy or spectroscopy then confirmed such a phase transition. Meanwhile, the topological edge states were found to be very robust in the presence of strain.

physics, multidisciplinary
Strain Tunable Semimetal-Topological-Insulator Transition in Monolayer 1T-WTe<sub>2</sub>

Chenxiao Zhao,Mengli Hu,Jin Qin,Bing Xia,Canhua Liu,Shiyong Wang,DanDan Guan,Yaoyi Li,Hao Zheng,Junwei Liu,Jinfeng Jia

DOI: https://doi.org/10.1103/PhysRevLett.125.046801

IF: 8.6

2020-01-01

Physical Review Letters

Abstract:A quantum spin hall insulator is manifested by its conducting edge channels that originate from the nontrivial topology of the insulating bulk states. Monolayer 1T'-WTe2 exhibits this quantized edge conductance in transport measurements, but because of its semimetallic nature, the coherence length is restricted to around 100 nm. To overcome this restriction, we propose a strain engineering technique to tune the electronic structure, where either a compressive strain along the a axis or a tensile strain along the b axis can drive 1T'-WTe2 into an full gap insulating phase. A combined study of molecular beam epitaxy and in situ scanning tunneling microscopy or spectroscopy then confirmed such a phase transition. Meanwhile, the topological edge states were found to be very robust in the presence of strain.
Strain-induced two-dimensional topological crystalline insulator

Liwei Jing,Mohammad Amini,Adolfo O. Fumega,Orlando J. Silveira,Jose L. Lado,Peter Liljeroth,Shawulienu Kezilebieke

2024-10-09

Abstract:Topological crystalline insulators (TCIs) host topological phases of matter protected by crystal symmetries. Topological surface states in three-dimensional TCIs have been predicted and observed in IV-VI SnTe-class semiconductors. Despite the prediction of a two-dimensional (2D) TCI characterized by two pairs of edge states inside the bulk gap, materials challenges have thus far prevented its experimental realization. Here we report the growth and characterization of bilayer SnTe on the 2$H$-NbSe$_2$ substrate by molecular beam epitaxy and scanning tunneling microscopy. We experimentally observe two anticorrelated, periodically modulated pairs of conducting edge states along the perimeters of the sample with a large band gap exceeding $0.2$ eV. We identify these states with a 2D TCI through first principles calculations. Finally, we probe the coupling of adjacent topological edge states and demonstrate the resulting energy shift driven by a combination of electrostatic interactions and tunneling coupling. Our work opens the door to investigations of tunable topological states in 2D TCIs, of potential impact for spintronics and nanoelectronics applications at room temperature.

Mesoscale and Nanoscale Physics,Materials Science
On the effects of strain, defects, and interactions on the topological properties of HfTe5

Na Hyun Jo,Omar A. Ashour,Zhixue Shu,Chris Jozwiak,Aaron Bostwick,Sae Hee Ryu,Kai Sun,Tai Kong,Sinead M. Griffin,Eli Rotenberg

2023-03-20

Abstract:Topological insulators are characterized by spin-momentum-locked massless surface states which are robust under various perturbations. Manipulating such surface states is a topic of vigorous research, as a possible route for the realization of emergent many-body physics in topological systems. Thus far, time-reversal symmetry breaking via Coulomb and magnetic perturbations has been a dominant approach for the tuning of topological states. However, the effect of the structural degrees of freedom on quasi-particle dynamics in topological materials remains elusive. In this work, we demonstrate a transition in HfTe5 between distinct topological phases as a function of either Te vacancy concentration or applied strain; these phases are characterized theoretically as a transition from strong to weak topological insulator and experimentally by a transition from sharp surface states and Dirac crossing to a Fermi-liquid-like quasiparticle state in which these surface-localized features are heavily suppressed. Although vacancies can result in various consequences such as scattering, doping, and structural distortions, we show that changes in the lattice constants play the foremost role in determining the electronic structure, self-energy, and topological states of HfTe5. Our results demonstrate the possibility of using both defect chemistry and strain as control parameters for topological phase transitions and associated many-body physics.

Materials Science
Strain Induced Defect Superstructure on the Surface

Zhiming Wang,Fengmiao Li,Sheng Meng,Jiandi Zhang,EW Plummer,Ulrike Diebold,Jiandong Guo

IF: 8.6

2013-01-01

Physical Review Letters

Abstract:We report on a combined scanning tunneling microscopy and density functional theory calculation study of the SrTiO 3 (110)−(4× 1) surface. It is found that antiphase domains are formed along the [1 1 0]-oriented stripes on the surface. The domain boundaries are decorated by defect pairs consisting of Ti 2 O 3 vacancies and Sr adatoms, which relieve the residual stress. The formation energy of and interactions between vacancies result in a defect superstructure. It is suggested that the density and distributions of defects can be tuned by strain engineering, providing a flexible platform for the designed growth of complex oxide materials.

Strain Away

Strain engineering Dirac surface states in heteroepitaxial topological crystalline insulator thin films

Design of Strain-Engineered Quantum Tunneling Devices for Topological Surface States

Tuning Surface Dirac Valleys by Strain in Topological Crystalline Insulators

Strain-engineered Surface Transport in Si(001): Complete Isolation of the Surface State Via Tensile Strain.

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

Strain Induced Novel Quantum Magnetotransport Properties of Topological Insulators

Artificial Gravity Field, Astrophysical Analogues, and Topological Phase Transitions in Strained Topological Semimetals

Strain-induced Insulator–metal Transition in Ferroelectric BaTiO 3 (001) Surface: First-principles Study

Manipulating Topological Phase Transition by Strain.

Strain Engineering: Electromechanical Properties of Graphene

Strain Characterization in Two-Dimensional Crystals.

Material Realization of Topological Crystalline Insulators: Role of Strain and Spin-Orbit Coupling

Dynamics of Terraces on a Silicon Surface Due to the Combined Action of Strain and Electric Current

The Substrate Strain Mediated Magnetotransport Properties of Surface States in Topological Insulators

Interplay of orbital effects and nanoscale strain in topological crystalline insulators

Strain Tunable Semimetal–Topological-Insulator Transition in Monolayer 1 T ′ − WTe 2

Strain Tunable Semimetal-Topological-Insulator Transition in Monolayer 1T-WTe<sub>2</sub>

Strain-induced two-dimensional topological crystalline insulator

On the effects of strain, defects, and interactions on the topological properties of HfTe5

Strain Induced Defect Superstructure on the Surface