Properties of Fluorine-Doped SnO2 Thin Films by a Green Sol–gel Method

Quang-Phu Tran,Jau-Shiung Fang,Tsung-Shune Chin
DOI: https://doi.org/10.1016/j.mssp.2015.07.047
IF: 4.1
2015-01-01
Materials Science in Semiconductor Processing
Abstract:Fluorine doped tin oxide (FTO) films were fabricated on a glass substrate by a green sol–gel dip-coating process. Non-toxic SnF2 was used as fluorine source to replace toxic HF or NH4F. Effect of SnF2 content, 0–10mol%, on structure, electrical resistivity, and optical transmittance of the films were investigated using X-ray diffraction, Hall effect measurements, and UV–vis spectra. Structural analysis revealed that the films are polycrystalline with a tetragonal crystal structure. Grain size varies from 43 to 21nm with increasing fluorine concentration, which in fact critically impacts resultant electrical and optical properties. The 500°C-annealed FTO film containing 6mol% SnF2 shows the lowest electrical resistivity 7.0×10−4Ωcm, carrier concentration 1.1×1021cm−3, Hall mobility 8.1cm2V−1s−1, optical transmittance 90.1% and optical band-gap 3.91eV. The 6mol% SnF2 added film has the highest figure of merit 2.43×10−2Ω−1 which is four times higher than that of un-doped FTO films. Because of the promising electrical and optical properties, F-doped thin films prepared by this green process are well-suited for use in all aspects of transparent conducting oxide.
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