Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

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The Effect of Solution Treatment on the Si Particles’ Morphology Evolution and the Thermal Conductivity and Tensile Properties of Sb-Modified Al-8Si-0.6Mg Alloys

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Crystallization Behaviors of an Ultra-Thin Ga–Sb Film

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Crystallization behavior and electrical characteristics of Ga–Sb thin films for phase change memory

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Evolution of Compressive Stress and Electrical Conductivity of Tetrahedral Amorphous Carbon Films with Phosphorus Incorporation

Surface effects on the crystallization kinetics of amorphous antimony

Phase Transformation in Mg–Sb Thin Films

Controllable single phase enables superior thermal stability in Sb-Sn-S films

Phase Transition Characteristics of Al-Sb Phase Change Materials for Phase Change Memory Application

Crystallization Behavior of Si-added Amorphous Ga19Sb81 Films for Phase-Change Memory

Development of Sb phase change thin films with high thermal stability and low resistance drift by alloying with Se

Monatomic Sb thin films alloyed with Sb2S3 enables superior thermal stability and resistance drift by spontaneous self-decomposition

Designing Sb phase change materials by alloying with Ga 2 S 3 towards high thermal stability and low resistance drift by bond reconfigurations

Enhanced Structural Stability of Sb2Se3 Via Pressure-Induced Alloying and Amorphization