Silicon Microcavity-Based Photovoltaic Cells for IR Harvesting

Moisés Garín,Ramón Alcubilla,Roberto Fenollosa,Francisco Meseguer,Lei Shi,Lluís F. Marsal

DOI: https://doi.org/10.1117/2.1201405.005483

2014-01-01

SPIE Newsroom

Abstract:Photovoltaic cells on silicon spherical microcavities trap IR light, increasing the probability of photon absorption and enhancing the efficiency of solar energy devices.

What problem does this paper attempt to address?

IR light harvesting with silicon microspheres-application to photovoltaic devices

Moisés Garín,Roberto Fenollosa,Lei Shi,Ramón Alcubilla,Lluís F. Marsal,Francisco Meseguer

2015-01-01

Abstract:Single-junction photovoltaic devices suffer from intrinsic obstacles limiting their efficiency to a top value dictated by the well-known Shockley–Queisser (SQ) limit [1]. The most fundamental limitation is given by the energy bandgap of the semiconductor, which determines the minimum energy of photons that can be converted into electron-hole pairs. In the case of silicon a large percentage of infrared sunlight, with energy value below the fundamental absorption edge of silicon, is still useless. The development of photodiode devices on micro and nanophotonic structures has opened new possibilities over the standard technology. The impinging light is strongly confined inside those photonic structures, enhancing the optical absorption and photocarrier generation, as it has been reported for planar optical cavities and, more recently, for nanowire resonators [2,3]. Here we show the first example of a photodiode developed on a micrometer-size silicon spherical cavity whose photocurrent shows the Mie modes of a classical spherical resonator [4]. The long dwell time of resonating photons enhances the absorption efficiency of photons. As a result, the photocurrent response shows a rich spectra with plenty of high-Q resonant peaks in a similar manner as the scattering spectra of the high-order whispering gallery modes (WGMs) of spherical microcavities. Also, as a consequence of the enhanced resonant absorption, the photocurrent response extends far beyond the absorption edge of crystalline silicon [4]. It opens the door for developing a new generation of silicon solar cells and photodetectors that may harvest infrared light more efficiently than current silicon based photovoltaic devices.
Optical Characterisation of Silicon Nanocrystals Embedded in SiO2/Si3N4 Hybrid Matrix for Third Generation Photovoltaics.

Dawei Di,Heli Xu,Ivan Perez-Wurfl,Martin A Green,Gavin Conibeer

DOI: https://doi.org/10.1186/1556-276x-6-612

2011-01-01

Nanoscale Research Letters

Abstract:Silicon nanocrystals with an average size of approximately 4 nm dispersed in SiO2/Si3N4 hybrid matrix have been synthesised by magnetron sputtering followed by a high-temperature anneal. To gain understanding of the photon absorption and emission mechanisms of this material, several samples are characterised optically via spectroscopy and photoluminescence measurements. The values of optical band gap are extracted from interference-minimised absorption and luminescence spectra. Measurement results suggest that these nanocrystals exhibit transitions of both direct and indirect types. Possible mechanisms of absorption and emission as well as an estimation of exciton binding energy are also discussed.
Multibandgap Quantum Dot Ensembles for Solar-Matched Infrared Energy Harvesting.

Bin Sun,Olivier Ouellette,F. Pelayo García de Arquer,Oleksandr Voznyy,Younghoon Kim,Mingyang Wei,Andrew H. Proppe,Makhsud I. Saidaminov,Jixian Xu,Mengxia Liu,Peicheng Li,James Z. Fan,Jea Woong Jo,Hairen Tan,Furui Tan,Sjoerd Hoogland,Zheng Hong Lu,Shana O. Kelley,Edward H. Sargent

DOI: https://doi.org/10.1038/s41467-018-06342-7

IF: 16.6

2018-01-01

Nature Communications

Abstract:As crystalline silicon solar cells approach in efficiency their theoretical limit, strategies are being developed to achieve efficient infrared energy harvesting to augment silicon using solar photons from beyond its 1100 nm absorption edge. Herein we report a strategy that uses multi-bandgap lead sulfide colloidal quantum dot (CQD) ensembles to maximize short-circuit current and open-circuit voltage simultaneously. We engineer the density of states to achieve simultaneously a large quasi-Fermi level splitting and a tailored optical response that matches the infrared solar spectrum. We shape the density of states by selectively introducing larger-bandgap CQDs within a smaller-bandgap CQD population, achieving a 40 meV increase in open-circuit voltage. The near-unity internal quantum efficiency in the optimized multi-bandgap CQD ensemble yielded a maximized photocurrent of 3.7 ± 0.2 mA cm −2 . This provides a record for silicon-filtered power conversion efficiency equal to one power point, a 25% (relative) improvement compared to the best previously-reported results.
The Micro-Optic Photovoltaic Behavior of Solar Cell along with Microlens Curved Glass Substrate

Jin Xie,Keke Wu,Jian Cheng,Ping Li,Jiahua Zheng

DOI: https://doi.org/10.1016/j.enconman.2015.03.006

IF: 10.4

2015-01-01

Energy Conversion and Management

Abstract:A hybrid of microlens structure and curved surface may produce high value-added micro-optic performance. Hence, the microlens array is proposed on macro curved glass substrate of thin film solar cell. The objective is to understand how the micro-optic behavior of microlens curved array influences indoor power conversion efficiency and outdoor electricity generation. First, the absorptivities of visible light and infrared light were analyzed in connection with the curved microlens sizes; then the microlens curved glass substrate was fabricated by a Computer Numerical Control (CNC) micro-grinding with micro diamond wheel V-tip; finally, its photovoltaic properties and electricity generation were measured, respectively. It is shown that the microlens curved surface may strongly absorb and scatter light to solar cell. It increases the absorptivity of visible light against plane surface, but it decreases the one of infrared light against microlens surface. When it is applied to solar cell, it enhances the power conversion efficiency by 3.4-10.6% under oblique illumination. When it is applied to solar device, it increases the electricity generation of daylight by 119-106% against microlens surface and by 260-419% against traditional plane surface, respectively. The surprising finding is that it produces much larger electricity generation during cloudy day than during sunny day, but traditional plane surface does not so. (C) 2015 Elsevier Ltd. All rights reserved.
Efficient infrared sunlight absorbers based on gold-covered, inverted silicon pyramid arrays

Jinhui Hu,Luis A. Pérez,Juan Luis Garcia-Pomar,Agustín Mihi,Miquel Garriga,M. Isabel Alonso,Alejandro R. Goñi

DOI: https://doi.org/10.1039/d1ma01237a

2021-09-29

Abstract:The transparency of silicon in the infrared region enables the design of nano/microstructures for implementation in devices to harvest the infrared (IR) part of the solar spectrum. Herein we report a strategy that uses arrays of inverted silicon pyramids covered with a thin gold film, which exhibit substantial light absorption in the infrared spectral range (below the gap of Si). The absorption stems from the resonant excitation at infrared wavelengths of surface-plasmon polaritons at the metal/dielectric interface mainly by tuning size and separation of the inverted pyramids. The array-parameters optimization proceeded by iteration of the calculation and measurement of the infrared response using finite difference time-domain simulations and Fourier-transform IR spectroscopy, respectively. We show two fabrication routes for this kind of metal/silicon metamaterials either by photolithography or scalable nanoimprint techniques for a seamless integration in optoelectronic fabrication processes.

Optics,Materials Science
Silicon Nanocrystal Conjugated Polymer Hybrid Solar Cells with Improved Performance

Yi Ding,Ryan Gresback,Qiming Liu,Shu Zhou,Xiaodong Pi,Tomohiro Nozaki

DOI: https://doi.org/10.1016/j.nanoen.2014.06.024

IF: 17.6

2014-01-01

Nano Energy

Abstract:Hybrid inorganic/organic solar cells based on silicon nanocrystals (NCs) and conjugated polymers are optimized through tuning the surface termination of Si NCs and selecting a narrow bandgap conjugated polymer. Here freestanding Si NCs are blended with either P3HT or PTB7 in a solution phase. The resulting mixture is spin-cast to form a bulk hetrojunction structure, on which a hybrid solar cell is fabricated. It is found that by altering the surface termination of Si NCs from predominately chlorine termination to hydrogen termination the power conversion efficiency (PCE) of a hybrid solar cell is significantly improved. PTB7-based solar cells efficiently respond to a wider spectrum of sunlight than P3HT-based ones. This is due to the lower bandgap of PTB7 compared to P3HT (~1.8eV vs. ~2.0eV). Finally, PCE up to 2.2% has been achieved in solar cell fabricated by using hydrogen-terminated Si NCs and PTB7.
Optical Resonance Engineering for Infrared Colloidal Quantum Dot Photovoltaics

Olivier Ouellette,Nadir Hossain,Brandon R. Sutherland,Amirreza Kiani,F. Pelayo García de Arquer,Hairen Tan,Mohamed Chaker,Sjoerd Hoogland,Edward H. Sargent

DOI: https://doi.org/10.1021/acsenergylett.6b00403

IF: 22

2016-01-01

ACS Energy Letters

Abstract:We report optically enhanced infrared-harvesting colloidal quantum dot solar cells based on integrated Fabry–Perot cavities. By integrating the active layer of the photovoltaic device between two reflective interfaces, we tune its sensitivity in the spectral region at 1100–1350 nm. The top and bottom electrodes also serve as mirrors, converting the device into an optical resonator. The front conductive mirror consists of a dielectric stack of SiNx and SiO2 with a terminal layer of ITO and ZnO in which current can flow, while the back mirror consists of a highly reflective gold layer. Adjusting the reflectivity and central wavelength of the front mirror as well as the thickness of the active layer allowed increases in absorption by a total of 56% in the infrared, leading to a record external quantum efficiency of 60% at 1300 nm. This work opens new avenues toward low-cost, high-efficiency rear-junction photovoltaic harvesters that add to the overall performance of silicon solar cells.
Group IV Mid-Infrared Thermophotovoltaic Cells on Silicon

Gérard Daligou,Richard Soref,Anis Attiaoui,Jaker Hossain,Mahmoud R. M. Atalla,Patrick Del Vecchio,Oussama Moutanabbir

DOI: https://doi.org/10.48550/arXiv.2302.10742

2023-02-21

Abstract:Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming. However, the prohibitively high cost associated with these technologies limits their broad adoption. Herein, to alleviate this challenge we introduce an all-group IV mid-infrared cell consisting of GeSn alloy directly on a silicon wafer. This emerging class of semiconductors provides strain and composition as degrees of freedom to control the bandgap energy thus covering the entire mid-infrared range. The proposed thermophotovoltaic device is composed of a fully relaxed Ge$_{0.83}$Sn$_{0.17}$ double heterostructure corresponding to a bandgap energy of 0.29 eV. A theoretical framework is derived to evaluate cell performance under high injection. The black-body radiation absorption is investigated using the generalized transfer matrix method thereby considering the mixed coherent/incoherent layer stacking. Moreover, the intrinsic recombination mechanisms and their importance in a narrow bandgap semiconductor were also taken into account. In this regard, the parabolic band approximation and Fermi's golden rule were combined for an accurate estimation of the radiative recombination rate. Based on these analyses, power conversion efficiencies of up to 9% are predicted for Ge$_{0.83}$Sn$_{0.17}$ thermophotovoltaic cells under black-body radiation at temperatures in the 500-1500 K range. A slight improvement in the efficiency is observed under the frontside illumination but vanishes below 800 K, while the use of a backside reflector improves the efficiency across the investigated black-body temperature range. The effects of the heterostructure thickness, surface recombination velocity, and carrier lifetime are also elucidated and discussed.

Applied Physics
Optical Absorption In Vertical Silicon Nanowires For Solar Cell Applications

Martin Foldyna,Linwei Yu,Benedict O'Donnell,Pere Roca I Cabarrocas

DOI: https://doi.org/10.1117/12.892690

2011-01-01

Abstract:Photovoltaic research has moved from popular solar cells, based on crystalline silicon substrates with thicknesses of around 250 mu m, to the thin film structures saving large amount of the active material. The next generation of solar cells requires substantial increase of the energy conversion efficiency, which can be achieved by enhancing of the optical trapping inside the cell. In this work we study the efficiency of light trapping inside vertical silicon nanowire solar cells. The main focus is on the optical trapping inside single vertical nanowires, which can enhance optical absorption far beyond capabilities of a thin film. Spectral optical absorption modeling based on RCWA together with the electromagnetic field distribution analysis gave insight into the light trapping inside the nanowires. Results provide a guide for the optimization of nanowires diameters, density and length for maximal short circuit currents with minimal material demands.
Passive Radiative Cooling of Silicon Solar Modules with Photonic Silica Microcylinders

Evelijn Akerboom,Tom Veeken,Christoph Hecker,Jorik van de Groep,Albert Polman

DOI: https://doi.org/10.1021/acsphotonics.2c01389

IF: 7

2022-12-21

ACS Photonics

Abstract:Passive radiative cooling is a method to dissipate excess heat from a material by the spontaneous emission of infrared thermal radiation. For a solar cell, the challenge is to enhance PRC while retaining transparency for sunlight above the bandgap. Here, we design a hexagonal array of cylinders etched into the top surface of silica solar module glass to enhance passive radiative cooling. Multipolar Mie-like resonances in the cylinders are shown to cause antireflection effects in the infrared, which results in enhanced infrared emissivity. Using Fourier transform infrared spectrometry we measure the hemispherical reflectance of the fabricated structures and find the emissivity of the silica cylinder array in good correspondence with the simulated results. The microcylinder array increases the average emissivity between λ = 7.5-16 μm from 84.3% to 97.7%, without reducing visible light transmission.
Efficient quantum dot infrared solar cells with enhanced low-energy photon conversion via optical engineering

Sisi Liu,Ming-Yu Li,Kao Xiong,Jianbo Gao,Xinzheng Lan,Daoli Zhang,Liang Gao,Jianbing Zhang,Jiang Tang

DOI: https://doi.org/10.1007/s12274-022-4906-1

IF: 9.9

2022-10-09

Nano Research

Abstract:Infrared (IR) solar cells are promising devices for improving the power conversion efficiency (PCE) of conventional solar cells by expanding the utilization region of the sunlight spectrum to near-infrared range. IR solar cells based on colloidal quantum dots (QDs) have attracted extensive attention due to the widely tunable absorption spectrum controlled by dot size and the unique solution processibility. However, the trade-off in QD solar cells between light absorption and photo-generated carrier collection has limited the further improvement of PCE. Here, we present high-performance PbS QD IR solar cells resulting from the combination of boosted light absorption and optimized carrier extraction. By constructing an optical resonance cavity, the light absorption is significantly enhanced in the range of 1,150–1,300 nm at a relatively thin photoactive layer. Meanwhile, the thin photoactive layer facilitates efficient carrier extraction. Consequently, the PbS QD IR solar cells exhibit a highly efficient photoelectric conversion in the IR region, resulting in a high IR PCE of 1.3% which is comparable to the highest value of solution-processed IR solar cells based on PbSe QDs. These results demonstrate that constructing an optical resonance cavity is a reasonable strategy for effective conversion of photons in the devices aiming at light in a relatively narrow wavelength range, such as IR solar cells and narrow band photodetectors.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Multicrystalline Silicon Thin‐Film Solar Cells Based on Vanadium Oxide Heterojunction and Laser‐Doped Contacts

Isidro Martín,Gema López,Jonathan Plentz,Chen Jin,Pablo Ortega,Cristóbal Voz,Joaquim Puigdollers,Annett Gawlik,Guobin Jia,Gudrun Andrä

DOI: https://doi.org/10.1002/pssa.201900393

2019-08-28

physica status solidi (a)

Abstract:Liquid phase crystallized (LPC) silicon thin films on glass substrates are a feasible alternative to conventional crystalline silicon (c‐Si) wafers for solar cells. Due to substrate limitation, a low temperature technology is needed for solar cell fabrication. While silicon heterojunction is typically used, in this work the combination of vanadium oxide/c‐Si heterojunction as emitter and base contacts defined by IR laser processing of phosphorus‐doped amorphous silicon carbide stacks is explored. LPC solar cells are fabricated using such technologies in order to identify their issues and advantages with a promising performance of an active‐area efficiency of 5.6%. Apart from the absence of light trapping techniques, the relatively low efficiency obtained is attributed to a low lifetime in the LPC silicon bulk. These poor material properties imply a short diffusion length that makes that only photogenerated carriers in the emitter regions could be collected. Consequently, future devices should show narrower base contact regions, suggesting a shorter‐wavelength laser, combined with longer LPC substrate lifetimes.This article is protected by copyright. All rights reserved.
Extending the near-infrared band-edge absorption spectrum of silicon by proximity to a 2D semiconductor

Valerio Apicella,Teslim Ayinde Fasasi,Fai Wong,Dennis C.W. Leung,Antonio Ruotolo,Hon Fai Wong

DOI: https://doi.org/10.1016/j.apsusc.2020.147803

IF: 6.7

2021-02-01

Applied Surface Science

Abstract:Because of its low-cost, silicon is the standard material for photovoltaic conversion. Yet, its band-edge absorption spectrum is narrower than the spectrum of the solar radiation, which reduces its conversion efficiency. In this paper, it is shown that the spectrum of absorbance of silicon can be extended to longer wavelengths by proximity to a two-dimensional (2D) semiconductor. Photo-induced Hall effect, together with standard absorption spectroscopy, was employed to estimate the increase of photo-conversion efficiency of a 2D-platinum-diselenide/intrinsic-silicon heterostructure. The system shows a significantly higher absorption in the infrared as compared to the single films. Angle resolved X-ray Photoelectron Spectroscopy (XPS) confirm that a change of the band structure occurs in the silicon substrate at the interface between the two semiconductors. The results are interpreted in the framework of band-gap narrowing due to hole-confinement in the Si, induced by electron-confinement in the 2D film. This allows us to claim that the increase of photo-conversion efficiency in the Pt/PtSe2/Si sample is due to an enhancement of the light absorbance of silicon near the interface. Possible application of the effect in photo-voltaic cells is discussed.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Boosting Infrared Light Harvesting by Molecular Functionalization of Metal Oxide/Polymer Interfaces in Efficient Hybrid Solar Cells

Giulia Grancini,R. Sai Santosh Kumar,Agnese Abrusci,Hin-Lap Yip,Chang-Zhi Li,Alex-K. Y. Jen,Guglielmo Lanzani,Henry J. Snaith

DOI: https://doi.org/10.1002/adfm.201102360

IF: 19

2012-01-01

Advanced Functional Materials

Abstract:Hybrid solar cells based on light absorbing semiconducting polymers infiltrated in nanocrystalline TiO2 electrodes, have emerged as an attractive concept, combining benefits of both low material and processing costs with well controlled nano-scale morphology. However, after over ten years of research effort, power conversion efficiencies remain around 0.5%. Here, a spectroscopic and device based investigation is presented, which leads to a new optimization route where by functionalization of the TiO2 surface with a molecular electron acceptor promotes photoinduced electron transfer from a low-band gap polymer(poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b0]dithiophene)-alt-4,7-(2,1,3-benzothiadia-zole)] (PCPDTBT) to the metal oxide. This boosts the infrared response and the power conversion efficiency to over 1%. As a further step, by co-functionalizing the TiO2 surface with the electron acceptor and an organic dye-sensitizer, panchromatic spectral photoresponse is achieved in the visible to near-IR region. This novel architecture at the heterojunction opens new material design possibilities and represents an exciting route forward for hybrid photovoltaics.
Designing High-Efficiency Thin Silicon Solar Cells Using Parabolic-Pore Photonic Crystals

Sayak Bhattacharya,Sajeev John

DOI: https://doi.org/10.1103/physrevapplied.9.044009

IF: 4.6

2018-04-06

Physical Review Applied

Abstract:We demonstrate the efficacy of wave-interference-based light trapping and carrier transport in parabolic-pore photonic-crystal, thin-crystalline silicon (c-Si) solar cells to achieve above 29% power conversion efficiencies. Using a rigorous solution of Maxwell’s equations through a standard finite-difference time domain scheme, we optimize the design of the vertical-parabolic-pore photonic crystal (PhC) on a 10-μm-thick c-Si solar cell to obtain a maximum achievable photocurrent density (MAPD) of 40.6 mA/cm2 beyond the ray-optical, Lambertian light-trapping limit. For a slanted-parabolic-pore PhC that breaks x-y symmetry, improved light trapping occurs due to better coupling into parallel-to-interface refraction modes. We achieve the optimum MAPD of 41.6 mA/cm2 for a tilt angle of 10° with respect to the vertical axis of the pores. This MAPD is further improved to 41.72 mA/cm2 by introducing a 75-nm SiO2 antireflective coating on top of the solar cell. We use this MAPD and the associated charge-carrier generation profile as input for a numerical solution of Poisson’s equation coupled with semiconductor drift-diffusion equations using a Shockley-Read-Hall and Auger recombination model. Using experimentally achieved surface recombination velocities of 10 cm/s, we identify semiconductor doping profiles that yield power conversion efficiencies over 29%. Practical considerations of additional upper-contact losses suggest efficiencies close to 28%. This improvement beyond the current world record is largely due to an open-circuit voltage approaching 0.8 V enabled by reduced bulk recombination in our thin silicon architecture while maintaining a high short-circuit current through wave-interference-based light trapping.

physics, applied
Broadband Antireflection and Absorption Enhancement of Ultrathin Silicon Solar Microcells Enabled with Density-Graded Surface Nanostructures

Lesley Chan,Dongseok Kang,Sung-Min Lee,Weigu Li,Hajirah Hunter,Jongseung Yoon

DOI: https://doi.org/10.1063/1.4881260

IF: 4

2014-01-01

Applied Physics Letters

Abstract:Density-graded surface nanostructures are implemented on ultrathin silicon solar microcells by silver-nanoparticle-catalyzed wet chemical etching to enable near-zero surface reflection over a broad wavelength range of incident solar spectrum as well as non-zeroth order diffraction and light trapping for longer wavelength photons, thereby achieving augmented photon absorption for ultrathin silicon microcells in a simple, cost-effective manner. The increase of absorbed photon flux through the “black silicon (b-Si)” surface translates directly into the corresponding enhancement of photovoltaic performance, where 5.7-μm b-Si microcells with the rational design of device configuration exhibit improved energy conversion efficiency by 148% and 50% with and without a diffuse backside reflector, respectively, compared to devices from the bare silicon without b-Si implementation. Systematic studies on nanostructured morphology, optical and electrical properties of b-Si microcells, together with semi-empirical numerical modeling of photon absorption, provide key aspects of underlying materials science and physics.
Lithography free method to synthesize quasi‐periodic silicon inverted‐pyramid arrays: A broad band light trapper for high efficiency thin silicon solar cells

Anil Kumar,Divya Rani,Anjali Saini,Neeraj Joshi,Ravi Kumar Varma,Mrinal Dutta,Arup Samanta

DOI: https://doi.org/10.1002/solr.202400014

IF: 9.1726

2024-03-08

Solar RRL

Abstract:Thin silicon solar cells could be a low‐cost effective photo‐conversion device, if the device can efficiently absorb the solar spectrum. Here, a new lithography free technique has been developed for the fabrication of quasi‐periodic silicon inverted pyramids arrays (SiIPAs), which show a high light trapping phenomena in the UV‐VIS‐NIR (300 nm‐2000 nm). Fabricated SiIPA samples show a significant reduction of reflectance (3%) in the silicon absorption band (300 nm – 1000 nm). A unique additional absorption of 33 – 44% compared to the planar silicon, has been observed in the sub‐bandgap region of silicon (1100 – 2000 nm) for these samples. Photocurrent response measurement confirms the generation of additional electron‐hole pairs in the sub‐bandgap region of silicon for the SiIPA samples in comparison with planar sample. These results signify the effect of field confinement and the creation of optical resonance modes within these structures, qualitatively supported by numerical simulation. The estimated short circuit current density (JSC) using the experimental absorption spectrum of SiIP arrays is 55.46 mA/cm2, which is far higher than the Lambertian limit of ∽ 43 mA/cm2. The theoretical efficiency of the solar cell can be achieved up to 35.22%, which surpasses the Shockley‐Queisser limit of 33.7%. This article is protected by copyright. All rights reserved.

energy & fuels,materials science, multidisciplinary
Sub-bandgap near-infrared photovoltaic response in Au/Al2O3/n-Si metal–insulator–semiconductor structure by plasmon-enhanced internal photoemission

Xiyuan Dai,Li Wu,Liang Yu,Zhiyuan Yu,Fengyang Ma,Yuchen Zhang,Yanru Yang,Jian Sun,Ming Lu

DOI: https://doi.org/10.1186/s11671-023-03818-4

2023-01-01

Nanoscale Research Letters

Abstract:Silicon sub-bandgap near-infrared (NIR) (λ > 1100 nm) photovoltaic (PV) response by plasmon-enhanced internal photoemission was investigated. The Si sub-bandgap NIR PV response, which remains unexploited in Schottky junction-like solar cell device, was examined using nanometer sized Au/Al2O3/n-Si junction arrays. This kind of metal–insulator–semiconductor structure was similar in functionality to Schottky junction in NIR absorption, photo-induced charge separation and collection. It showed that NIR absorption increased steadily with increasing volume of Au nanoparticles (NPs) till a saturation was reached. Simulation results indicated the formation of localized surface plasmon on the surfaces of Au NPs, which was correlated well with the observed NIR absorption. On the other hand, the NIR PV response was found sensitive to the amount and size of Au NPs and thickness of Al2O3. Chemical and field-effect passivation of n-Si by using Al2O3 and SiO2 were used to optimize the NIR PV response. In the current configuration, the best PV conversion efficiency was 0.034
Enhanced Silicon PV efficiency by solar light spectral modulation via photonically tuned porphyrin‐iron oxide hybrid thin films

Mengyao Lyu,Jou Lin,Yuxin Wang,Ovais Aulakh,Nathan Ceja,Mary Sheryl Ramesh,Elisabeth Salazar,John Krupczak,Donglu Shi

DOI: https://doi.org/10.1002/ente.202300144

IF: 4.149

2023-03-27

Energy Technology

Abstract:The key challenge in photovoltaic solar applications has been the limitation of power conversion efficiency (PCE) as it is dictated by the intrinsic processes in a semiconductor. In particular, the temperature dependence of PCE needs to be addressed upon long‐term solar irradiation. In this study, we develop an alternative strategy by modulating the solar light spectrum with a series of photonic hybrids. Transparent thin films are synthesized with the solutions of porphyrin compounds and iron oxides which exhibit strong absorptions in the UV and IR regions. These spectral modulating thin films are photonically tuned via compositional optimization to absorb photons near 400 nm and above 1127 nm from solar spectrum to reduce thermalization and sub‐band‐gap absorption. These spectral modulators are applied in a particular configuration above a commercial silicon panel to partially filter the simulated solar light. The PCE of the silicon panel suffers a significant decrease due to temperature increase from 22.9 °C to 92.9 °C after 60 min solar irradiation, resulting in a PCE decrease from 25.1 % to 16.3 %. With the transparent spectral modulators, upon solar irradiation for 60 min, the maximum PCE has maintained at 20.5 %. The mechanisms of PCE enhancement are identified based on reduced thermalization and sub‐band‐gap absorption. As shown in this figure, a transparent spectral modulator (TSM) is placed under the solar simulator so that the light passes through it, shining on a silicon PV panel. These transparent spectral modulators are made of various porphyrin and iron oxide compounds with different absorption spectra. These spectral modulators can effectively modify the incoming solar light spectrum by retarding photons in certain frequency ranges to suppress IR heating and thermalization so that PCE can be further increased under prolonged solar irradiation. A portion of solar light is able to direcly shine on the PV panel surface in the patterned region marked in yellow for enhanced ISC, while the rest of the solarlight is to be modulated by TSM for reducing thermalization in the UV and heating in the IR regions in order to increase VOC. The area ratio of TSM film‐covered to the unconvered PV surface is optimized for maximum PCE and output power. This article is protected by copyright. All rights reserved.

energy & fuels
Multi‐resonant Mie Resonator Arrays for Broadband Light Trapping in Ultrathin c‐Si Solar Cells

Nayeun Lee,Muyu Xue,Jiho Hong,Jorik van de Groep,Mark L. Brongersma

DOI: https://doi.org/10.1002/adma.202210941

IF: 29.4

2023-05-04

Advanced Materials

Abstract:Effective photon management is critical to realize high power conversion efficiencies for thin crystalline Si (c‐Si) solar cells. Standard few‐100‐μm‐thick bulk cells achieve light trapping with macroscopic surface textures covered by thin, continuous antireflection coatings. Such sizeable textures are challenging to implement on ultrathin cells. Here, we illustrate how nanoscale Mie‐resonator‐arrays with a bi‐modal size distribution support multiple resonances that can work in concert to achieve simultaneous antireflection and light‐trapping across the broad solar spectrum. We experimentally demonstrate the effectiveness of these light‐trapping antireflection coatings (LARCs) on a 2.8‐μm‐thick c‐Si solar cell. The measured short‐circuit current and corresponding power conversion efficiency are notably improved, achieving efficiencies as high as 11.2%. Measurements of the saturation current density on completed cells indicate that thermal oxides can effectively limit surface recombination. The presented design principles are applicable to a wide range of solar cells. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Silicon Microcavity-Based Photovoltaic Cells for IR Harvesting

IR light harvesting with silicon microspheres-application to photovoltaic devices

Optical Characterisation of Silicon Nanocrystals Embedded in SiO2/Si3N4 Hybrid Matrix for Third Generation Photovoltaics.

Multibandgap Quantum Dot Ensembles for Solar-Matched Infrared Energy Harvesting.

The Micro-Optic Photovoltaic Behavior of Solar Cell along with Microlens Curved Glass Substrate

Efficient infrared sunlight absorbers based on gold-covered, inverted silicon pyramid arrays

Silicon Nanocrystal Conjugated Polymer Hybrid Solar Cells with Improved Performance

Optical Resonance Engineering for Infrared Colloidal Quantum Dot Photovoltaics

Group IV Mid-Infrared Thermophotovoltaic Cells on Silicon

Optical Absorption In Vertical Silicon Nanowires For Solar Cell Applications

Passive Radiative Cooling of Silicon Solar Modules with Photonic Silica Microcylinders

Efficient quantum dot infrared solar cells with enhanced low-energy photon conversion via optical engineering

Multicrystalline Silicon Thin‐Film Solar Cells Based on Vanadium Oxide Heterojunction and Laser‐Doped Contacts

Extending the near-infrared band-edge absorption spectrum of silicon by proximity to a 2D semiconductor

Boosting Infrared Light Harvesting by Molecular Functionalization of Metal Oxide/Polymer Interfaces in Efficient Hybrid Solar Cells

Designing High-Efficiency Thin Silicon Solar Cells Using Parabolic-Pore Photonic Crystals

Broadband Antireflection and Absorption Enhancement of Ultrathin Silicon Solar Microcells Enabled with Density-Graded Surface Nanostructures

Lithography free method to synthesize quasi‐periodic silicon inverted‐pyramid arrays: A broad band light trapper for high efficiency thin silicon solar cells

Sub-bandgap near-infrared photovoltaic response in Au/Al2O3/n-Si metal–insulator–semiconductor structure by plasmon-enhanced internal photoemission

Enhanced Silicon PV efficiency by solar light spectral modulation via photonically tuned porphyrin‐iron oxide hybrid thin films

Multi‐resonant Mie Resonator Arrays for Broadband Light Trapping in Ultrathin c‐Si Solar Cells