Abstract:The biomimetic universal character of time‐ and rate‐dependent synaptic responses in dynamic memristors, La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3, of varying resistance range is demonstrated. The memristive switching at interfaces is assessed by a compact model. Second‐order memristors with their internal short‐term dynamics display behavioral similarities with biological neurons and constitute an ideal basis unit for hardware neuromorphic networks, aims at treating spatio‐temporal tasks. Here, La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 second‐order memristive devices are investigated whose resistances and temperature dependencies range, on the same chip, from semiconductor to metal, but exhibit a universal neuromorphic plasticity. All devices may be described using a compact phenomenological model of current conduction, showing that resistive switching originates from interfaces, through charge trapping. Remarkably, the processes of short‐term memory gain/loss and long‐term consolidation/forgetting are the same whatever the device type. Only the synaptic transmission weights and the excitation/relaxation times with respect to stimuli differ, as it occurs for synapses/neurons in the brain. The weights may be tuned by the sole use of the frequency of stimuli (the activity rate), their evolution being dependent on previous activities (the history). Metal and semiconductor devices display the same in‐operando dynamics of potentiation or of depression, the transition from one regime to another being history‐dependent. The threshold frequencies are slightly lower in semiconducting devices. This work contributes to better understanding of memristive switching and plasticity and is relevant for the development of brain‐mimetic neural networks with new programming paradigms.

Synaptic Metaplasticity Realized in Oxide Memristive Devices.

Memristors with Tunable Characteristics Based on the Tellurene/nb-Doped MoS2 Heterojunction Toward Bio-Realistic Synaptic Emulation

Synaptic Metaplasticity Emulation in a Freestanding Oxide-Based Neuromorphic Transistor with Dual In-Plane Gates

Bipolar to Unipolar Mode Transition and Imitation of Metaplasticity in Oxide Based Memristors with Enhanced Ionic Conductivity

Full imitation of synaptic metaplasticity based on memristor devices.

Emulating Dynamic Synaptic Plasticity over Broad Timescales with Memristive Device

Emulating long-term synaptic dynamics with memristive devices

Memristors with Diffusive Dynamics As Synaptic Emulators for Neuromorphic Computing

Tuning Analog Resistive Switching and Plasticity in Bilayer Transition Metal Oxide Based Memristive Synapses

Electronic Imitation of Behavioral and Psychological Synaptic Activities Using Tiox/Al2o3-Based Memristor Devices

Engineering the Synaptic Kinetic Process into Memristive Device

TaOx Based Memristors with Recessed Bottom Electrodes and Built-in Ion Concentration Gradient As Electronic Synapses

Neuromorphic learning and recognition in WO3- xthin film-based forming-free flexible electronic synapses

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO X /zno X /tin Memristive System

Universal Synaptic Plasticity of Interface‐Based Second‐Order Memristors

Ultrathin SrTiO3-based oxide memristor with both drift and diffusive dynamics as versatile synaptic emulators for neuromorphic computing

Impact of the La2NiO4+δ oxygen content on the synaptic properties of the TiN/La2NiO4+δ/Pt memristive devices

Material Memristive Device Circuits with Synaptic Plasticity: Learning and Memory

Artificial synapses based on HfOx/TiOy memristor devices for neuromorphic applications

Synaptic plasticity in zinc oxide-based flexible invisible transparent memristor by modulating oxygen concentration

Artificial synapses based on HfO x/TiO y memristor devices for neuromorphic applications