Abstract:Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse as we move into the late TMs. Additionally, the Fermi energy increases monotonously as the d-shell is filled from the early to mid TMs and we observe few to no gap states, indicating the possibility of both p- (early TMs) and n- (mid TMs) type doping. Quite surprisingly, the simulations indicate the possibility of interstitial doping of TMDs; the energetics reveal that a significant number of dopants, increasing in number from molybdenum disulfide to diselenide and to ditelluride, favor the interstitial sites over adsorbed ones. Furthermore, calculations of the activation energy associated with capturing the dopants into the interstitial site indicate that the process is kinetically possible. This suggests that interstitial impurities in TMDs are more common than thought to date and we propose a series of potential interstitial dopants for TMDs relevant for application in nanoelectronics based on a detailed analysis of the predicted electronic structures.

Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser‐Assisted Reaction

Space-confined and Substrate-Directed Synthesis of Transition-Metal Dichalcogenide Nanostructures with Tunable Dimensionality.

A Shallow Acceptor of Phosphorous Doped in MoSe<sub>2</sub> Monolayer

Patterning and doping of Transition Metals in Tungsten Dichalcogenides

Spatially precise light-activated dedoping in wafer-scale MoS2 films

Modulating Electronic Structure of Monolayer Transition Metal Dichalcogenides by Substitutional Nb‐Doping

Controlled One Step Thinning and Doping of Two-Dimensional Transition Metal Dichalcogenides

Novel doping alternatives for single-layer transition metal dichalcogenides

Controlled Doping of Wafer‐Scale PtSe2 Films for Device Application

Controlled Doping Engineering in 2D MoS2 Crystals Toward Performance Augmentation of Optoelectronic Devices.

Spatially Precise Light‐Activated Dedoping in Wafer‐Scale MoS2 Films

Versatile Post-Doping toward Two-Dimensional Semiconductors

Demonstration of the Key Substrate-Dependent Charge Transfer Mechanisms Between Monolayer MoS2 and Molecular Dopants

Controlled Synthesis and Accurate Doping of Wafer‐Scale Two‐Dimensional Semiconducting Transition Metal Dichalcogenides

Laser doping of 2D material for precise energy band design

Tuning Electrical and Optical Properties of MoSe2 Transistors Via Elemental Doping

Controllable Thin-Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

Chemical Trend of Transition-Metal Doping in WSe2

Selective Surface Modification and Layer Thinning of MoS 2 via Ultraviolet-Light Irradiation in an Ionic Solution: Implications for Multifunctional Nanoelectronic Devices

Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides

Universal p-Type Doping via Lewis Acid for 2D Transition-Metal Dichalcogenides