Abstract:Eu-doped AlN thin film has been prepared by radio frequency magnetron sputtering and studied focusing on its photoluminescence (PL) properties dependent on temperature. The resultant 0.4–0.8% of the Eu ion content is an appropriate concentration, with both trivalent Eu 3+ and divalent Eu 2+ ions being detected. The film also appears oxygen-rich with an optical bandgap redshifted to 5.8 eV, so, has been named as an inherently codoped AlN 0.9 O 0.1 :Eu 2+ /Eu 3+ . The film emits intense red light under UV excitation, where narrow intense lines from the excited level 5 D 0 of Eu 3+ dominate in the spectra consisting of two bunches of intense peaks at 624 and 666 nm and several satellite peaks at 545, 585, 602 and 713 nm. Eu 2+ manifests itself as a low-intense PL band at 430–570 nm. The PL excitation spectra containing wide UV bands allow to conclude the Eu excitation by nonradiative energy transfer (NRET) of two pathways: (i) from the resonant defect levels and vacancy-oxygen complexes in the AlN 1– x O x host to Eu 3+ ions and (ii) from O 2− to Eu 2+ (Eu–O pairs) with a subsequent NRET from Eu 2+ to Eu 3+ . The temperature dependence of the thermally coupled levels 5 D 1 and 5 D 0 of Eu 3+ ions is studied in detail from −160 to +250 °C and considered in terms of optical thermometry using the fluorescence intensity ratio (FIR) technique. At higher temperatures, the levels show an absolute sensitivity up to 0.003 K –1 . Furthermore, applying a broadband multi-peak detection and the FIR of Eu 2+ /Eu 3+ , we have achieved much higher sensitivity up to 0.01 K –1 . Such values are rather high, so AlN 1– x O x :Eu 2+ /Eu 3+ seems to be a promising material for non-contact optical thermometry.

Effect of annealing temperature on Eu2+ and Eu3+ ratios in AlN:Eu thin films

Microstructure Evolution of AlN:Eu Films at Different Annealing Temperatures

Preparation and Photoluminescence Properties of Eu3+-Doped Al2O3 Films on Silicon Substrates by the Sol-gel Method

Effect of High-Temperature Annealing on AlN Thin Film Grown by Metalorganic Chemical Vapor Deposition

Thermal annealing effects on ultra-violet luminescence properties of Gd doped AlN

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

High‐Temperature Annealing of AlGaN

Annealing Effects On The Field Emission Properties Of Aln Nanorods

Effects of Network Modifier Oxides on Luminescence Properties of Eu-Dy Co-doped White Light Emission Aluminoborosilicate Glasses

Crystal Quality Evolution Of Aln Films Via High-Temperature Annealing Under Ambient N-2 Conditions

Effect of annealing conditions on the luminescence properties and thermometric performance of Sr 3 Al 2 O 5 Cl 2 :Eu 2+ and SrAl 2 O 4 :Eu 2+ phosphors

Influence of annealing temperature on persistent luminescence in BaAl2O4:Eu2+/Eu3+ nanocrystals and its application for latent fingerprint detection

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Structural and surface analysis of AlInN thin films synthesized by elemental stacks annealing

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Understanding the Local and Electronic Structures toward Enhanced Thermal Stable Luminescence of CaAlSiN3:Eu2+

Effective Suppression of AlN Impurity in Synthesis of CaAlSiN 3 :Eu 2+ Phosphors under Condition of Atmospheric Pressure

Photoluminescence thermometry using broadband multi-peak detection in Eu 2+ /Eu 3+ -codoped oxygen-rich AlN film

Characteristics of Annealing of InN Films

Study on preparation mechanism and luminescence property of CaAlSiN3: Eu phosphor