A Novel Temperature Drift Error Estimation Model for Capacitive MEMS Gyros Using Thermal Stress Deformation Analysis

Bing Qi,Jianhua Cheng,Zili Wang,Chao Jiang,Chun Jia

DOI: https://doi.org/10.3390/mi15030324

IF: 3.4

2024-02-27

Micromachines

Abstract:Because the conventional Temperature Drift Error (TDE) estimation model for Capacitive MEMS Gyros (CMGs) has inadequate Temperature Correlated Quantities (TCQs) and inaccurate parameter identification to improve their bias stability, its novel model based on thermal stress deformation analysis is presented. Firstly, the TDE of the CMG is traced precisely by analyzing its structural deformation under thermal stress, and more key decisive TCQs are explored, including ambient temperature variation ∆T and its square ∆T2, as well its square root ∆T1/2; then, a novel TDE estimation model is established. Secondly, a Radial Basis Function Neural Network (RBFNN) is applied to identify its parameter accurately, which eliminates local optimums of the conventional model based on a Back-Propagation Neural Network (BPNN) to improve bias stability. By analyzing heat conduction between CMGs and the thermal chamber with heat flux analysis, proper temperature control intervals and reasonable temperature control periods are obtained to form a TDE precise test method to avoid time-consuming and expensive experiments. The novel model is implemented with an adequate TCQ and RBFNN, and the Mean Square Deviation (MSD) is introduced to evaluate its performance. Finally, the conventional model and novel model are compared with bias stability. Compared with the conventional model, the novel one improves CMG's bias stability by 15% evenly. It estimates TDE more precisely to decouple Si-based materials' temperature dependence effectively, and CMG's environmental adaptability is enhanced to widen its application under complex conditions.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied

What problem does this paper attempt to address?

The problem that this paper attempts to solve is that the traditional temperature drift error (TDE) estimation model has the problems of insufficient temperature - correlated quantities (TCQs) and inaccurate parameter identification in capacitive micro - electro - mechanical system gyros (CMGs), and these problems affect the bias stability of CMGs. Specifically, since CMGs use silicon - based materials with temperature - dependence, temperature changes will change the physical properties of these materials, thereby introducing TDE and reducing the performance and application range of CMGs. Therefore, the paper proposes a new TDE estimation model based on thermal - stress - deformation analysis to estimate and correct TDE more accurately and improve the bias stability and environmental adaptability of CMGs.

### Main improvement points:
1. **New TCQ exploration**: By analyzing the deformation of the structure under thermal stress, the paper discovers more critical TCQs, including the ambient temperature change \(\Delta T\), its square \(\Delta T^{2}\) and its square root \(\Delta T^{1/2}\).
2. **Using RBFNN for parameter identification**: The paper adopts the radial basis function neural network (RBFNN) to accurately identify model parameters, avoiding the local optimum problem of the traditional back - propagation neural network (BPNN) and further improving the bias stability.
3. **Accurate TDE test method**: Through heat - flow analysis, the paper determines the appropriate temperature - control interval and a reasonable temperature - control period, forming an accurate TDE test method, avoiding time - consuming and expensive experiments.

### Experimental results:
Compared with the traditional model, the new model improves the bias stability of CMGs by 15%, estimates TDE more accurately, effectively decouples the temperature - dependent effect of silicon - based materials, and enhances the application ability of CMGs in complex environmental conditions.

### Key formulas:
- **Capacitance formula**:
\[
C_{0}=\frac{\epsilon S_{0}}{4\pi k d_{0}}
\]
where \(\epsilon\) is the relative dielectric constant, \(k\) is the electrostatic force constant, \(S_{0}\) is the overlapping area of the sensing comb teeth, and \(d_{0}\) is the plate spacing.

- **Capacitance change formula**:
\[
\Delta C=\sum_{i = 1}^{n}(C_{i}-C_{0})=n\left(\frac{\epsilon S_{0}}{4\pi k(d_{0}-\Delta d)}-\frac{\epsilon S_{0}}{4\pi k d_{0}}\right)
\]

- **Overlapping area length deformation formula**:
\[
b_{1}=b_{0}+\Delta b'+\Delta b''=b_{0}+\alpha b_{0}\Delta T+\alpha b_{0}\Delta T=b_{0}(1 + 2\alpha\Delta T)
\]
where \(\alpha\) is the thermal expansion coefficient of the silicon - based material, \(\Delta b'\) and \(\Delta b''\) are the length deformations of two adjacent sensing comb teeth respectively, and \(\Delta T\) is the ambient temperature change.

- **Overlapping area width deformation formula**:
\[
c_{1}=c_{0}+2\Delta c=c_{0}+2\alpha c_{0}\Delta T=c_{0}(1 + 2\alpha\Delta T)
\]
where \(\Delta c\) is the width deformation.

Through these improvements, the paper aims to provide a more accurate and stable TDE estimation method, thereby enhancing the performance of CMGs in various fields.