Tunable Hot-Carrier Photodetection Beyond the Bandgap Spectral Limit

Yan-Feng Lao,A. G. Unil Perera,L. H. Li,S. P. Khanna,E. H. Linfield,H. C. Liu

DOI: https://doi.org/10.1038/nphoton.2014.80

IF: 35

2014-01-01

Nature Photonics

Abstract:The spectral response of common optoelectronic photodetectors is restricted by a cutoff wavelength limit λc that is related to the activation energy (or bandgap) of the semiconductor structure (or material) (Δ) through the relationship λc = hc/Δ. This spectral rule dominates device design and intrinsically limits the long-wavelength response of a semiconductor photodetector. Here, we report a new, long-wavelength photodetection principle based on a hot–cold hole energy transfer mechanism that overcomes this spectral limit. Hot carriers injected into a semiconductor structure interact with cold carriers and excite them to higher energy states. This enables a very long-wavelength infrared response. In our experiments, we observe a response up to 55 µm, which is tunable by varying the degree of hot-hole injection, for a GaAs/AlGaAs sample with Δ = 0.32 eV (equivalent to 3.9 µm in wavelength). By exploiting hot-carrier injection, the photodetection capabilities of a semiconductor structure have been extended to wavelengths as long as 55 µm, which is well beyond the usual spectral limits determined by energy levels.