Abstract:A solution‐processed narrow bandgap conjugated polymer enables ultrasensitive infrared photodetection at room temperature. A simple, monolithic photoconductive device demonstrates a low electronic noise, enabling a detectivity of >109 Jones using the ultralow flux of a blackbody that mirrors the background emission of objects. This performance suggests practical utility, and that uncooled detectivities superior to inorganic devices are achievable at high operating temperatures. Photodetectors operating across the short‐, mid‐, and long‐wave infrared (SWIR–LWIR, λ = 1–14 μm) underpin modern science, technology, and society in profound ways. Narrow bandgap semiconductors that form the basis for these devices require complex manufacturing, high costs, cooling, and lack compatibility with silicon electronics, attributes that remain prohibitive for their widespread usage and the development of emerging technologies. Here, a photoconductive detector, fabricated using a solution‐processed narrow bandgap conjugated polymer is demonstrated that enables charge carrier generation in the infrared and ultrasensitive SWIR–LWIR photodetection at room temperature. Devices demonstrate an ultralow electronic noise that enables outstanding performance from a simple, monolithic device enabling a high detectivity (D*, the figure of merit for detector sensitivity) >2.44 × 109 Jones (cm Hz1/2 W−1) using the ultralow flux of a blackbody that mirrors the background emission of objects. These attributes, ease of fabrication, low dark current characteristics, and highly sensitive operation overcome major limitations inherent within modern narrow–bandgap semiconductors, demonstrate practical utility, and suggest that uncooled detectivities superior to many inorganic devices can be achieved at high operating temperatures.

Mid-infrared Photodetectors Operating over an Extended Wavelength Range Up to 90 K.

High‐Performance Room‐Temperature Extended‐Wavelength InAs‐Based Middle‐Wavelength Infrared Photodetector

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Wavelength-Tunable Multispectral Photodetector With Both Ultraviolet and Near-Infrared Narrowband Detection Capability

High-speed long-wave infrared ultra-thin photodetectors

Fast Uncooled Mid‐Wavelength Infrared Photodetectors with Heterostructures of van der Waals on Epitaxial HgCdTe

A bandgap-engineered HgCdTe PBπn long-wavelength infrared detector

Low Dark Current HgCdTe Long Wavelength Infrared Photodiodes with Bandgap Gradient Multi-Layer Heterojunction

HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement

InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

Mid-IR Photodetection by Interlayer Exciton in 2D Heterostructure

Silicon-based Intermediate-band Infrared Photodetector realized by Te Hyperdoping

High‐Performance N‐MoSe2/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

High-Performance Ultra-Broadband Photodetector Based on Fe3O4/CrSiTe3 Heterostructures

High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction

Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-incidence Response in the Long-wavelength Infrared

Scalable fabrication of long-wave infrared PtSe 2 -G heterostructure array photodetectors

Long and Very Long Wavelength InAs/InAsSb Superlattice Complementary Barrier Infrared Detectors

Ultrasensitive Room Temperature Infrared Photodetection Using a Narrow Bandgap Conjugated Polymer