Interface Engineering through Atomic Layer Deposition towards Highly Improved Performance of Dye-Sensitized Solar Cells

Hao Lu,Wei Tian,Jun Guo,Liang Li
DOI: https://doi.org/10.1038/srep12765
IF: 4.6
2015-01-01
Scientific Reports
Abstract:A composite photoanode comprising ultralong ZnO nanobelts and TiO 2 nanoparticles was prepared and its performance in dye-sensitized solar cells (DSSCs) was optimized and compared to the photoanode consisting of conventional TiO 2 nanoparticles. The ultralong ZnO nanobelts were synthesized in high yield by a facile solution approach at 90 o C followed by annealing at 500 o C. The effect of the ratio of ZnO nanobelts to TiO 2 nanoparticles on the light scattering, specific surface area and interface recombination were investigated. An optimum amount of ZnO nanobelts enhanced the photon-conversion efficiency by 61.4% compared to that of the conventional TiO 2 nanoparticles. To further reduce the recombination rate and increase the carrier lifetime, Atomic Layer Deposition (ALD) technique was utilized to coat a continuous TiO 2 film surrounding the ZnO nanobelts and TiO 2 nanoparticles, functioning as a barrier-free access of all electrons to conductive electrodes. This ALD treatment improved the interface contact within the whole photoanode system, finally leading to significant enhancement (137%) in the conversion efficiency of DSSCs.
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