Abstract:SnO2 has the advantages of excellent photostability and can be prepared at low-temperature below 200 degrees C.It is regarded as one of the excellent materials for the electron transport layer, and widely used in efficient andstable planar heterojunction perovskite solar cells. In this work, the low-cost, dense and uniform SnO2 electrontransport layer is prepared by spin coating at low temperature (150 degrees C) for perovskite solar cells with astructure of FTO/SnO2/CH3NH3PbI3 (MAPbI3)/Spiro-OMeTAD/Au. The crystallization and photoelectricproperties of SnO2 electron transport layers prepared at different concentrations (2.5%-10%) at 150 degrees C, and theinfluences of SnO2 electron transport layers on the formation of perovskite films and the performances ofperovskite solar cells are discussed. By analyzing the scanning electron microscope (SEM), ultraviolet-visiblelight absorption spectrum (UV-Vis) and transmission spectrum of the SnO2 film, it is found that the coverageand light transmittance of the substrate and band gap of the SnO2 film increase as the SnO2 content increases,while the absorbance decreases. By analyzing the SEM, UV-Vis, X-ray diffraction (XRD) and steady-statephotoluminescence spectrum (PL) analysis of the SnO2/MAPbI3 thin film, it is found that the MAPbI3deposited on the SnO2 layer with a concentration of 7.5% is uniform and pinhole-free, has the largest particlesize and the best crystallinity, as well as more effective charge extraction capability and transport capability.By analyzing the electrochemical impedance (EIS) and external quantum efficiency (EQE) of the device, theSnO2 electron transport layer with a concentration of 7.5% has better interface contact and lower interfaceresistance, which is beneficial to reducing the recombination of carriers and improving the photoelectricconversion capability, The perovskite solar cells based on SnO2 layer prepared with a concentration of 7.5%reaches a photoelectric conversion efficiency of 15.82% (Voc = 1.06 V, Jsc = 21.62 mA/cm2, FF = 69.40%), Afterstoring for 600 h in ambient air ((25 +/- 5) degrees C, RH>70%) without encapsulation, its efficiency remains 92% of theinitial efficiency. At the same time, we prepare flexible devices on flexible substrates (TIO/PEN) by using SnO2precursor with a concentration of 7.5%, which exhibits good photovoltaic performance and achieves aphotoelectric conversion efficiency of 13.12%, and storage time for 84 d in ambient air ((30 +/- 5) degrees C, RH>70%)without encapsulation, its efficiency remains 48% of the initial efficiency. The PCE retains 78% of the initialefficiency after 1000 bending cycles with a bending radius of 3 mm. The study of optimizing the concentrationof SnO2 has laid a foundation for improving the performance of flexible perovskite solar cells.

Low-temperature Solution-Processed Tin Oxide As an Alternative Electron Transporting Layer for Efficient Perovskite Solar Cells.

Low-temperature Preparation of Tin Dioxide Electron Transport Layer in Perovskite Solar Cells

Electrochemical Reduction and Ion Injection of Annealing‐Free SnO2 for High Performance Perovskite Solar Cells

A low-temperature TiO2/SnO2 electron transport layer for high-performance planar perovskite solar cells

Low Temperature Solution-Processed Sb : SnO 2 Nanocrystals for Efficient Planar Perovskite Solar Cells

Ultralow‐temperatureSnO2 Electron Transport Layers Fabricated by Intermediate‐controlled Chemical Bath Deposition for Highly Efficient Perovskite Solar Cells

Low-temperature Preparation of SnO<sub>2</sub> Electron Transport Layer for Perovskite Solar Cells

Improved SnO2 Electron Transport Layers Solution‐Deposited at Near Room Temperature for Rigid or Flexible Perovskite Solar Cells with High Efficiencies

Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer

Low-temperature preparation of SnO2 electron transportlayer for perovskite solar cells

Nitrogen‐doped tin oxide electron transport layer for stable perovskite solar cells with efficiency over 23%

Low‐Temperature Processing Methods for Tin Oxide as Electron Transporting Layer in Scalable Perovskite Solar Cells

Enhanced electron extraction using SnO2 for high-efficiency planar-structure HC(NH2)2PbI3-based perovskite solar cells

Solvent‐Assisted Low‐Temperature Crystallization of SnO2 Electron‐Transfer Layer for High‐Efficiency Planar Perovskite Solar Cells

A Compact Electron Transport Layer Using a Heated Tin‐Oxide Colloidal Solution for Efficient Perovskite Solar Cells

Energetically Favored Formation of SnO2 Nanocrystals As Electron Transfer Layer in Perovskite Solar Cells with High Efficiency Exceeding 19%

The low temperature solution-processable SnO2 modified by Bi2O2S as an efficient electron transport layer for perovskite solar cells

Enhanced Electronic Properties of SnO2 via Electron Transfer from Graphene Quantum Dots for Efficient Perovskite Solar Cells.

Non-toxic and rapid chemical bath deposition for SnO2 electron transporting layers in perovskite solar cells

Thermal Annealing-Free SnO2 for Fully Room-Temperature-Processed Perovskite Solar Cells

Manipulating SnO 2 Growth for Efficient Electron Transport in Perovskite Solar Cells