Integrated Digital Inverters Based on Two-Dimensional Anisotropic ReS2 Field-Effect Transistors

Erfu Liu,Yajun Fu,Yaojia Wang,Yanqing Feng,Huimei Liu,Xiangang Wan,Wei Zhou,Baigeng Wang,Lubin Shao,Ching-Hwa Ho,Ying-Sheng Huang,Zhengyi Cao,Laiguo Wang,Aidong Li,Junwen Zeng,Fengqi Song,Xinran Wang,Yi Shi,Hongtao Yuan,Harold Y. Hwang,Yi Cui,Feng Miao,Dingyu Xing

DOI: https://doi.org/10.1038/ncomms7991

IF: 16.6

2015-01-01

Nature Communications

Abstract:Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS 2 ) flakes with unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated monolayer and few-layer ReS 2 field-effect transistors, which exhibit competitive performance with large current on/off ratios (∼10 7 ) and low subthreshold swings (100 mV per decade). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known two-dimensional semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS 2 anisotropic field-effect transistors, suggesting the promising implementation of large-scale two-dimensional logic circuits. Our results underscore the unique properties of two-dimensional semiconducting materials with low crystal symmetry for future electronic applications.