Abstract:Abstract Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one—optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of A III B V , A II B VI , and potential alternatives to formerly mentioned—“ third wave ” superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device’s performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in A III B V APDs, such as AlInAsSb, which may be used in future optical communications, type-II superlattice (T2SLs, “Ga-based” and “Ga-free”), and 2D materials-based IR APDs. The latter—atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed A III B V APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs’ performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs’ active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~10 5 for MWIR [wavelength, λ = 4 μm, temperature, T = 10–180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance—sensitivity and low excess noise.

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Multilayer Graphene/Epitaxial Silicon Near-Infrared Self-Quenched Avalanche Photodetectors

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High Detectivity and Fast Response Avalanche Photodetector Based on GaSe/PtSe2 P–n Junction

Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures

High-Speed Self-Powered PdSe2/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe2 Quantum Island Structure

High detectivity and fast response avalanche photodetector based on GaSe/PtSe 2 p–n junction

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Layer-dependent Ultrafast Dynamics of Α-In2se3 Nanoflakes

Approaching the Intrinsic Threshold Breakdown Voltage and Ultrahigh Gain in a Graphite/InSe Schottky Photodetector

Infrared avalanche photodiodes from bulk to 2D materials

Multilayer InSe-Te van der Waals heterostructures with ultrahigh rectification ratio and ultrasensitive photoresponse

Low-Energy Ion Implantation and Deep-Mesa Si-Avalanche Photodiodes with Improved Fabrication Process

Surface Oxidation Doping to Enhance Photogenerated Carrier Separation Efficiency for Ultrahigh Gain Indium Selenide Photodetector

High‐Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self‐Aligned Contacts

Scalable Van Der Waals Heterojunctions for High-Performance Photodetectors.

High-performance self-powered ultraviolet to near-infrared photodetector based on WS2/InSe van der Waals heterostructure

PtSe2/InP Mixed‐Dimensional Schottky Junction for High‐Performance Self‐Powered Near‐Infrared Photodetection

Achieving a Noise Limit with a Few-layer WSe2 Avalanche Photodetector at Room Temperature

Silicon single-photon avalanche diodes with nano-structured light trapping