Abstract:By employing first-principles calculations within the framework of density functional theory, we investigated the structural, electronic, and magnetic properties of graphene and various two-dimensional carbon-nitride (2DNC) nanosheets. The different 2DCN gives rise to diverse electronic properties such as metals (<math> C 3 N 2</math>), semimetals (<math> C 4 N</math> and <math> C 9 N 4</math>), half-metals (<math> C 4 N 3</math>), ferromagnetic-metals (<math> C 9 N 7</math>), semiconductors (<math> C 2 N</math>, <math> C 3 N</math>, <math> C 3 N 4</math>, <math> C 6 N 6</math>, and <math> C 6 N 8</math>), spin-glass semiconductors (<math> C 10 N 9</math> and <math> C 14 N 12</math>), and insulators (<math> C 2 N 2</math>). Furthermore, the effects of adsorption and substitution of hydrogen atoms as well as N-vacancy defects on the electronic and magnetic properties are systematically studied. The introduction of point defects, including N vacancies, interstitial H impurity into graphene and different 2DCN crystals, results in very different band structures. Defect engineering leads to the discovery of potentially exotic properties that make 2DCN interesting for future investigations and emerging technological applications with precisely tailored properties. These properties can be useful for applications in various fields such as catalysis, energy storage, nanoelectronic devices, spintronics, optoelectronics, and nanosensors.

Tuning the Electronic and Magnetic Properties of Graphene-Like AlN Nanosheets by Surface Functionalization and Thickness

First-principles Study of Size Effects on Electrical Properties of AlN/GaN Heterostructured Nanofilms

Tuning electronic and magnetic properties of graphene by surface modification

On Decorating a Honeycomb AlN Monolayer with Hydrogen and Fluorine Atoms: Ab Initio and Experimental Aspects

First-principles Study on the Structural and Electronic Properties of AlNCx Nanosheet

In-Situ Synthesis of Undulated Ni Anchored To Graphene/Al with One- Step Method

2D AlN Layers Sandwiched Between Graphene and Si Substrates

Two-dimensional carbon nitride (2DCN) nanosheets: Tuning of novel electronic and magnetic properties by hydrogenation, atom substitution and defect engineering

Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

One-time mass production of AlN nanosheets: Synergistic effect of high-energy shear and effective collision in a sanding mill

Preparation and Characterization of AlN-Based Hierarchical Nanostructures with Improved Chemical Stability

Beyond structural stabilization of highly-textured AlN thin film: the role of chemical effects

Tuning the electronic and magnetic properties of graphene-like SiGe hybrid nanosheets by surface functionalization.

Electronic structure regulation of AlN/SiC nanoribbons through edge passivation with different atoms and doping with various transition metal atoms

Novel Porous Aluminum Nitride Monolayer Structures A First-principles Study

Half-Metallicity in Graphitic C3n4 Nanoribbons: an Ab Initio Study

Tuning the Electronic and Optical Properties of Two-Dimensional Hydrogenated C-Bn Nanosheets by Be and C Dopants and Vacancy Defects

Fundamental properties of Alkali-intercalated bilayer graphene nanoribbons

Tailoring the Properties of Ni(111)/Graphone Interfaces by Intercalation of Al and Na: A DFT Study

Influence of Substrate Temperature on Structural Properties and Deposition Rate of AlN Thin Film Deposited by Reactive Magnetron Sputtering

Tunable structural phases and electronic properties of group V MSi2N4 (M = V, Nb, Ta) nanosheets via surface hydrogenation: a first-principles study