Abstract:Relaxors are a family of polar-oxides with a high degree of chemical disorder and nanosized domains. A characteristic feature of relaxors is their slim polarization–electric field hysteresis loop, which makes them effective in high-power energy storage applications requiring fast (dis)charging, such as electric vehicles, smart grids, RFID technologies, and pulsed-power devices. Interest in relaxor thin films is also driven by a push to reduce overall device size and enhance energy efficiency. Improved long-term reliability is essential for using oxide thin films in devices. However, ionic vacancies and defect complexes formed during fabricationinvariably affect oxide thin-film electrical properties. Such defects affect the long-term polarization properties of ferroelectric-oxides with micron-sized domains via mechanisms such as domain-wall pinning. However, the relaxor’s nanoscale domains are highly dynamic, making domain-boundaries pinning negligible. Although it is generally accepted that defects significantly affect relaxor thin-film properties, the specific roles of defects in relaxor thin films are still obscure. This review deliberates the fundamentals and recent advances in engineering relaxor thin-film defects to improve their electrostatic energy storage properties (ESP) over broad operating conditions. In addition, we explore the possibility of tuning other degrees of freedom, such as the preferred crystallographic orientation of grains that may augment the ESP of relaxor thin films. The study concludes with a perspective on how the issues facing the adoption of relaxor thin films in energy storage devices can be overcome by a better understanding of their microscopic charge compensation mechanisms and intelligent exploitation of their anisotropic dielectric properties.

Relaxation of ferroelectric thin films of diisopropylammonium perchlorate.

Physicochemical Properties of Organic Molecular Ferroelectric Diisopropylammonium Chloride Thin Films

A Molecular Ferroelectric Thin Film of Imidazolium Perchlorate That Shows Superior Electromechanical Coupling

Diisopropylammonium Bromide is a High-Temperature Molecular Ferroelectric Crystal

Above-room-temperature Molecular Ferroelectric and Fast Switchable Dielectric of Diisopropylammonium Perchlorate

Wafer‐Scale Diisopropylammonium Bromide Films for Low‐Power Lateral Organic Ferroelectric Capacitors

The Growth Mechanism and Ferroelectric Domains of Diisopropylammonium Bromide Films Synthesized Via 12-Crown-4 Addition at Room Temperature

Relaxor Ferroelectric Polymers–Fundamentals and Applications

Two reversible ferroelectric phase transitions in diisopropylammonium perchlorate

Relaxor Ferroelectric Characteristics And Temperature-Dependent Domain Structure In A (110)-Cut (Pbmg1/3nb2/3o3)(0.75)(Pbtio3)(0.25) Single Crystal

Phase Diagrams, Dielectric, and Piezoelectric Properties of Metal-Free Perovskite Thin Films: Phase-field Simulations

Domain Switching Dynamics for ImClO4 Molecular Ferroelectric Thin Films

High dielectric temperature stability in the relaxor ferroelectric thin films via using a multilayer heterostructure

Spontaneous self-formation of molecular ferroelectric heterostructures

Temperature dependence of piezo- and ferroelectricity in ultrathin P(VDF-TrFE) films

Defect and texture engineering of relaxor thin films for High-Power energy storage applications

Tuning the ferroelectric phase transition of PVDF by uniaxially stretching crosslinked PVDF films with CFCH bonds

Textured organic ferroelectric films from physical vapor deposition and amorphous-to-crystalline transition

The Study of Electrical Conductivity and Dielectric Relaxation in the Organic Ferroelectric Diisopropylammonium Iodide (dipaI)

Effect of stress on ferroelectric properties in flexible BiFe0.97Cr0.03O3/BiFe1−xMnxO3 composite thin films

A Series of High-Temperature Molecular Ferroelectric Crystals: Chlorine Doped Diisopropylammonium Bromide