Abstract:The design and fabrication of a monolithically integrated evanescent-coupled Ge-on-silicon-on-insulator (SOI) photodetector and CMOS circuits were realized on common SOI platform using an ??electronic-first and photonic-last?? integration approach. High-performance detector with an integrated Si waveguide was demonstrated on epitaxial Ge-absorbing layer selectively grown on an ultrathin SOI substrate. Performance metrics of photodetector designs featuring vertical and lateral PIN configurations were investigated. When operated at a bias of -1.0 V, a vertical PIN detector achieved a lower I dark of ~ 0.57 ??A as compared to a lateral PIN detector, a value that is below the typical ~ 1 ??A upper limit acceptable for high-speed-receiver design. Very high responsivity of ~ 0.92 A/W was obtained in both detector designs for a wavelength of 1550 nm, which corresponds to a quantum efficiency of ~ 73%. Impulse response measurements showed that the vertical PIN detector gives rise to a smaller full-width at half-maximum of ~ 24.4 ps over a lateral PIN detector, which corresponds to a -3 dB bandwidth of ~ 11.3 GHz. RC time delay is shown to be the dominant factor limiting the speed performance. Eye patterns (pseudorandom binary sequence 27-1) measurement further confirms the achievement of high-speed and low-noise photodetection at a bit rate of 8.5 Gb/s. Excellent transfer and output characteristics have also been achieved by the integrated CMOS inverter circuits in addition to the well-behaved logic functions. The introduction of an additional thermal budget (800??C) arising from the Ge epitaxy growth has no observable detrimental impact on the short-channel control of the CMOS inverter circuit. In addition, we describe the issues associated with monolithic integration and discuss the potential of Ge-detector/Si CMOS receiver for future optical communication applications.

Three-dimensional (3D) Monolithically Integrated Photodetector and WDM Receiver Based on Bulk Silicon Wafer

Integrated Reconfigurable Microring Based Silicon Wdm Receiver for On-Chip Optical Interconnect

WDM multi-channel silicon photonic receiver with 320 Gbps data transmission capability.

320 Gbps Monolithic Silicon Photonic DWDM Receiver

Monolithic Silicon Photonic DWDM Receiver for Terabit Data Communications

Low Thermal Budget Monolithic Integration of Evanescent-Coupled Ge-on-SOI Photodetector on Si CMOS Platform

Monolithic Photonic Integration of Suspended Light Emitting Diode, Waveguide and Photodetector

Highly Integrated Ultra-Low Leakage Current Shortwave Infrared Photodetector Based on Ge-Si Heterogenous Wafer Bonding

Monolithically Fabricated Germanium-On-Soi Photodetector and Si Cmos Circuit for Integrated Photonic Applications

A 256 Gbps Heterogeneously Integrated Silicon Photonic Microring-based DWDM Receiver Suitable for In-Package Optical I/O

A Monolithically-Integrated Chip-to-Chip Optical Link in Bulk CMOS

Multi-channel Silicon Photonic Receiver Based on Ring-Resonators

40Gbps Optical Receiver Based on Germanium Waveguide Photodetector Hybrid-Integrated with 90nm CMOS Amplifier

A 3D Integrated Energy-Efficient Transceiver Realized by Direct Bond Interconnect of Co-Designed 12 nm FinFET and Silicon Photonic Integrated Circuits

High-Speed Receiver Based on Waveguide Germanium Photodetector Wire-Bonded to 90nm Soi Cmos Amplifier

Monolithic integration and optimization of waveguide silicon modulators and germanium photodetectors

High-speed III-V nanowire photodetector monolithically integrated on Si

Demonstration of first WDM CMOS photonics transceiver with monolithically integrated photo-detectors

Four-Dimensional Silicon Photonic Dual-Polarization Direct Detection Receiver

High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate.

High-Speed Monolithically Integrated Silicon Optical Receiver Fabricated in 130-Nm Cmos Technology