Abstract:Utilizing the standard high-temperature solid-phase reaction, a novel red phosphor Mg2YVO6:xEu3+ (0.05 ≤ x ≤ 0.35) was synthesized, and its preparation parameters and luminescence characteristics were examined. The phosphor emits an intense red light, in which the strong energy transfer between Eu3+ and VO4 3− leads to intense light, while the local symmetry of the lattice around Eu3+ determines the color of the emitted light. With an intensity ratio of 3.89 between the electric dipole and magnetic dipole transitions, it's evident that Eu3+ is located at the non-inversion symmetry site in Mg2YVO6. Additionally, there was a mere 23 % reduction in brightness at 423 K, sufficient to demonstrate the phosphor's robust thermal stability. The fluorescence lifetime for the Mg2YVO6:0.2Eu3+ phosphor was ascertained by analyzing its decay curve at 618 nm following stimulation at 395 nm, and the recorded fluorescence lifetime stood at 423.87 μs. When kept at room temperature, the CIE coordinates for Mg2YVO6:0.1Eu3+ phosphor when excited at 328 nm stand at (0.6564, 0.3527), with its color purity at 99.82 %, and the CIE coordinates for Mg2YVO6:0.2Eu3+ when excited at 395 nm are (0.6616, 0.3378), and its color purity at 99.9 %. The creation of a white light-emitting diode involved blending Mg2YVO6:0.2Eu3+ phosphor with BaMgAl10O17:Eu2+ blue phosphor and green phosphor (Ba, Sr)2SiO4:Eu2+ in a ratio of 40:2:1, applied to the n-UV chip at 395 nm, acquiring a CIE coordinate (0.3687, 0.4074), a color temperature of 4495 K, Ra = 89, R9 = 87.5. Observations reveal that Mg2YVO6:Eu3+, a phosphor characterized by its high color purity and good thermal stability, holds significant promise for white light-emitting diodes.

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