Abstract:Impurity doping in silicon (Si) ultra-large-scale integration is one of the key challenges which prevent further device miniaturization. Using ultraviolet photoelectron spectroscopy and X-ray absorption spectroscopy in the total fluorescence yield mode, we show that the lowest unoccupied and highest occupied electronic states of ≤3 nm thick SiO2-coated Si nanowells shift by up to 0.2 eV below the conduction band and ca. 0.7 eV below the valence band edge of bulk silicon, respectively. This nanoscale electronic structure shift induced by anions at surfaces (NESSIAS) provides the means for low-nanoscale intrinsic Si (i-Si) to be flooded by electrons from an external (bigger, metallic) reservoir, thereby getting highly electron- (n-) conductive. While our findings deviate from the behavior commonly believed to govern the properties of silicon nanowells, they are further confirmed by the fundamental energy gap as per nanowell thickness when compared against published experimental data. Supporting our findings further with hybrid density functional theory calculations, we show that other group IV semiconductors (diamond, Ge) do respond to the NESSIAS effect in accord with Si. We predict adequate nanowire cross-sections (X-sections) from experimental nanowell data with a recently established crystallographic analysis, paving the way to undoped ultrasmall silicon electronic devices with significantly reduced gate lengths, using complementary metal-oxide-semiconductor-compatible materials.

Incorporation and Redistribution of Impurities into Silicon Nanowires During Metal-Particle-assisted Growth.

Uncertainty quantification in nanowire growth modeling - A precursor to quality semiconductor nanomanufacturing.

Metallization of Silicon Nanowires and Sers Response from A Single Metallized Nanowire

Self-inhibition effect of metal incorporation in nanoscaled semiconductors

Intergrowth Mechanism of Silicon Nanowires and Silver Dendrites

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Atomistics of vapor-liquid-solid nanowire growth

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Atomic scale mapping of impurities in partially reduced hollow TiO2 nanowires

Ultrahigh Incorporation of Tin in SiSn Nanowires Grown via In-Plane Solid-Liquid-Solid Mechanism

High-resolution Detection of Au Catalyst Atoms in Si Nanowires

High-fidelity Moulding Growth and Cross-section Shaping of Ultrathin Monocrystalline Silicon Nanowires

Operating Principles of In-Plane Silicon Nanowires at Simple Step-Edges

Dendrite-Assisted Growth of Silicon Nanowires in Electroless Metal Deposition

Turning Low-Nanoscale Intrinsic Silicon Highly Electron-Conductive by SiO2 Coating

Dispersion, Refinement, and Manipulation of Single Silicon Nanowires

Nanostripe-Confined Catalyst Formation for Uniform Growth of Ultrathin Silicon Nanowires

Deterministic Single-Row-Droplet Catalyst Formation for Uniform Growth Integration of High-Density Silicon Nanowires

Growth-In-Place Deployment of In-Plane Silicon Nanowires

Wetting Layer: the Key Player in Plasma-Assisted Silicon Nanowire Growth Mediated by Tin